- 期刊
以90奈米CMOS實現之採用轉導提升雙推式架構的94/188 GHz雙頻帶壓控震盪器
A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS
摘要
本研究中，我們使用台積電90奈米CMOS製程實現一個94/188GHz的雙頻帶壓控震盪器。此LC壓控震盪器使用轉導提升雙推式架構。轉導提升雙推式架構使用class-B放大器得到較高的轉換增益。所設計的壓控震盪器晶片面積為0.70 X 0.75 mm^2，其中包含緩衝器和pad。當輸入電壓為 1 V，輸入電流為19.6 mA時，壓控震盪器基頻(f_o)的調諧範圍為92.73 ~ 95.17GHz；二次諧波(2f_o)的調諧範圍為185.5 ~ 190.3 GHz。電路最大輸出功率為-8.23 dBm (f_o)和-24.8 dBm (2f_o)。在偏離中心頻率1 MHz 時之相位雜訊為-92.49 dBc/Hz。
並列摘要
In this study, a 94/188 GHz Voltage Controlled Oscillator (VCO) was designed by a standard 90 nm CMOS technology. This study proposes a LC-VCO with a gm- boosted push-push pair. The gm-boosted push-push pair obtains the highest conversion efficiency using class-B amplifier. The circuit occupies a chip area of 0.70 X 0.75 mm^2 including the output buffers and pads. At a supply voltage of 1 V and the supply current is 19.6 mA, the fabricated LC-VCO provides a frequency tuning range from 92.73-95.17GHz at the fundamental port (f_o), and a frequency tuning range from 185.5~190.3 GHz at the push-push port (2f_o). The circuit delivers a maximum output power of -8.23 dBm (f_o) and -24.8 dBm (2f_o) and the phase noise is -92.49 dBc/Hz at 1 MHz frequency offset.