並列摘要
The vertical-type probe card of this paper used Si-wafer as substrate. The key point is to use buffer layers of low k elastomer, such as hydrogen silesquioxane, methyl sequioxane or PI (Polyimide), to release uneven forces due to either non-uniform profile of probe tips and ICs under test by the fabrication processes, or uneven strains and stresses during the burn-in tests. The electrical cross-coupling effects among the very dense probes can also be reduced by using low k elastomer. In addition, it can be applied for wafer level, and Test-During Burn-In (TDBI) to raise the efficiency and performance of test. For tip area as 10μm×10μm, the amount of compression deformation can be obtained as 5.58μm for 10 grams contact force, which can satisfy the industry specification of 5μm. By the way it can meet the small requirements of pitch as well as bond pad area as the times go by.