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LED磊晶MOCVD製程之最佳參數設定

Determination of Optimal Parameter Settings for LED MOCVD Processes

摘要


台灣LED產業有完整的上、下游供應鏈,LED廠商為提升競爭力,通常會大舉添購金屬有機物化學氣相沉積(Metal-Organic Chemical Vapor Deposition, MOCVD)機台設備,以大量生產方式提高機台產能,進而增加整體獲利。目前MOCVD薄膜的製程參數調整,是依據工程師經驗採逐一因素實驗法加以調整,但由於影響MOCVD薄膜之物理特性有諸多互相關聯性的製程參數,使得實驗過程變得相當複雜。本研究擬採取部分因子實驗設計和反應曲面法來決定LED磊晶之MOCVD製程最佳參數。使用實驗設計(Design of Experiments, DOE)可同時改變多個自變數特點規劃實驗並以變異數分析找出影響亮度之顯著因子,而應用反應曲面法(Response Surface Methodology, RSM)來評估其主因子及其水準範圍內所呈現的品質特性,可得到製程可能的最佳參數。實驗結果顯示,在P-type超晶格層,鎵流量為4.46 sccm、鎂流量為40 sccm、及通入時間為19.7 sec時,可得到預測最高亮度143.7 mcd,此最佳參數水準組合並經驗證實驗確認。透過此實驗方法,可降低實驗複雜度,俾磊晶工程師能藉以得到執行參數調整的參考方案,據以改善產品之品質。

並列摘要


The LED industry in Taiwan has invested a great amount of capital on the facilities of Metal-Organic Chemical Vapor Deposition (MOCVD) to gain competitive advantages from mass-production. The tuning of the parameter settings of the MOCVD process is often based on sequentially performing one-factor experiments by experienced engineers. However, due to the interactions among the process parameters of the physical characteristics of LED, the experimental process is often very complicated. This study determines the optimal parameter settings of the MOCVD process by using design of experiments (DOE) and the response surface methodology (RSM) where DOE is used to plan a group of experiments in which specified changes are made simultaneously to several process inputs and the RSM is used to investigate the quality characteristics within the range of key factors found in the previous DOE process. Accordingly, the optimal parameter settings which maximize the response can be determined. The predicted optimal parameter settings for p-SLS layer derived from the RSM regression are 4.46 sccm, 40 sccm and 19.7sec for TMGa flow, Cp2Mg flow, and growth time. With this composition, the predicted maximum output luminescence is 143.7 mcd which is justified by a real field practice. The proposed approach provides engineers with information about the parameter settings which can be used to further tune the process parameters.

參考文獻


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