AN X-BAND GaN MMIC CLAPP POWER OSCILLATOR WITH HIGH DC TO RF CONVERSION EFFICIENCY

Kai-Chun Chan ； Hwann-Kaeo Chiou

《電機工程學刊》 27卷2期 (2020/04) Pp. 45-50

https://doi.org/10.6329/CIEE.202004_27(2).0001

摘要

This paper presents a high power, high efficiency, low phase noise power oscillator. The oscillator is designed with WIN^(TM) 0.25 μm GaN process with 220 μm gate width. Self-bias effect caused by gate resistor was investigated and found that the use of proper gate resistance improved the DC-to-RF efficiency. With 8-V DC supply voltage, the power oscillator delivers a 19.6-dBm output power at -2.5 V gate bias, and 14.86 mA DC current that achieve a 21.9% DC-RF efficiency. Phase noise was measured to be -118.02 dBc/Hz at 1-MHz and -130 dBc/Hz at 10-MHz offset frequencies from 9.81 GHz oscillation frequency. The chip size with on chip RF choke and PAD is 1.5 × 1 mm^2.

關鍵字

Clapp power oscillator ； GaN/SiC ； DC-to-RF efficiency ； X-band