二氧化鈦(TiO2)是較為熟知之半導體材料,具有光觸媒特性、無毒性、在水溶液中穩定及成本低廉等優點,可以用於分解環境中污染物質。其光觸媒性質來自於寬能階,因此適合應用在太陽能光電轉換之電極材料。然而,此種TiO2材料存在缺點待改善,因為從文獻得知紫外光波長範圍之轉換效率僅3%,故必須使其能在可見光波長範圍產生光觸媒效應。目前已有一些文獻利用摻雜金屬元素改善TiO2材料之特性,即經由摻雜金屬元素之TiO2複合材料的物理、化學和光觸媒特性有可能得到較優的光觸媒材料。本研究係探討摻雜銅、鋅金屬元素之TiO2奈米米複合薄膜之光觸媒特性。利用陰極電弧沉積技術共沉積含銅、鋅元素之TiO2奈米複合薄膜於不鏽鋼基材上,製備不同結構的TiO2奈米薄膜,再以SEM、XRD觀察其微結構及UV光譜儀等檢測其薄膜性質,並藉由亞甲基藍溶液之光照降解率比較含銅、鋅元素之TiO2奈米複合薄膜於光觸媒之應用性。
Due to the special properties such as non-toxic, stable and low cost, titanium dioxide (TiO2) film is a promising photocatalytic material that can decompose and remove the pollutants from the environment. TiO2 is a material with wide bandgap, which has an excellent chemical stability that makes it suitable as electrode for photoelectrochemical conversion of solar energy. But in order to use TiO2 film as photocatalysts, it is necessary to improve its photochemical properties in the visible range, since TiO2 has a photocatalytic activity only under the ultraviolet light, which represents the total amount of about 3% in solar radiation. This improvement can be accomplished by doping with metallic atoms.The aim of this paper is to investigate the properties of Cu/Zn-doped TiO2 films in order to extend the photocatalytic activity of this oxidic material to the visible part of the absorption spectrum. The studied materials are obtained by using cathodic arc deposition process codeposited with Cu/Zn and TiO2 films on stainless steel substrates. The properties of the thin films were explored by XRD, SEM and UV-visible spectrum. The photocatalytic activity of the films was conducted by measuring absorption peak changes of methylene blue.