摘要
在此短文中，我們報導以光電子能譜術及程溫脫附法來研究氮化鎢化學氣相沉積前驅物分別在銅(111)及矽(100)(2 × 1)表面經過熱裂解形成薄膜的程序及機制。前驅物在銅表面最後分解形成氮化鎢及些許的類石墨。但有趣的是，同樣前驅物在矽表面卻形成零價的鎢、氮化矽與碳化矽。配位基從鎢移轉到矽的現象說明了矽表層原子對的懸空鍵具有高的反應性。文內亦對以同步輻射光源來從事光電子能譜術的優點作了一介紹。
關鍵字
表面化學 ； 表面反應機制 ； 化學氣相沉積 ； 氮化鎢前驅物 ； 程溫脫附法 ； 同步輻射光源 ； 光電子能譜術 ； 銅(111) ； 矽(100)(2 × 1) ； (^tBuN)_2W(NH^tBu)_2並列摘要
In this article, we described our recent work of a mechanistic study of a tungsten nitride CVD precursors thermally decomposed on Cu(111) and Si(100) (2 × 1) respectively by means of SR-XPS and TPD. Generally speaking, after decomposition on Cu(111), the formation of tungsten nitride is noted. In stark contrast, the decomposition of the precursor on Si(100) (2 × 1) leads to the formation of zero-valence tungsten clusters. The ligand transfer from tungsten to silicon manifests the high reactivity of dangling bonds in the dimerized silicon surface. A portion of this article with examples drawn from the precursor work is also devoted to the subject of synchrotron radiation based x-ray photoelectron spectroscopy in an aim to familiarize potential users with this powerful technique.