碳化矽晶圓複合加工技術

Hybrid Machining Technology of Silicon Carbide Wafer

丁嘉仁 ； 翁志強 ； 劉俊葳

《機械工業雜誌》 414期 (2017/09) Pp. 82-90

摘要

碳化矽雖具有優異材料物理特性，目前為繼矽晶圓材料之後，被注目看好之替代材料。但其材料堅硬(達莫氏硬度9.25～9.5)加工耗時成為產能上之瓶頸，導致成本居高不下。本研究以大氣電漿改質軟化輔助拋光之技術，結合化學機械拋光製程，整合開發創新碳化矽晶圓複合拋光技術，達到加速4吋碳化矽晶圓拋光製程之移除效率，並提升基板之表面拋光品質。

關鍵字

碳化矽晶圓 ； 拋光 ； 複合加工 ； 大氣電漿改質

並列摘要

Silicon carbide (SiC) is considered as a replacement material for Si semiconductor due to its superior physical properties in electronics industry. As the Mohs scale of mineral hardness of SiC material is about 9.25~9.5, which is obviously harder than silicon, the machining and polishing of SiC are more time consuming than that of silicon. Therefore the high process cost issue of SiC wafer is a key problem to tackle. In this study, we investigate the atmospheric plasma assisted surface softening technology, combined with the chemical mechanical planarization (CMP) process to polish 4 inch SiC wafers. Therefore, the material removal rate and surface quality are enhanced in wafer polishing process.

並列關鍵字

Silicon Carbide Wafer ； Polishing ； Hybrid Machining ； Atmospheric Plasma (AP) Treatment

參考文獻

Zhou, L.,Audurier, V.,Pirouz, P.(1997).Chemomechanical polishing of silicon carbide.J. Electrochem. Soc..144,161-163.

Lee, H. S.,Kim, D. I.,An, J. H.,Lee, H. J.,Kim, K. H.,Jeong, H.(2010).Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry.CIRP Annals - Manufacturing Technology.59(1),333-336.

Watanabe, J.,Hong, S. H.,Yamaguchi, K.,Touge, M.,Kuroda, N.(2007).Effect of TiO2 and CeO2 particles on SiC semiconductor surface polished under ultraviolet-ray irradiation.Proceeding of Advances in Abrasive Technology.(Proceeding of Advances in Abrasive Technology).:

Yamamura, K.,Takiguchi, T.,Ueda, M.,Deng, H.,Hattori, A. N.,Zettsu, N.(2011).Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface.CIRP Annals - Manufacturing Technology.60,571-574.

Wu, Y. B.,Wang, L. J.(2014).Experimental investigation on hybrid technology of ultrasonic vibration assisted chemo-mechanical grinding (CMG) silicon wafer.Advanced Materials Research.983,208-213.