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CVD磊晶物理模型系統分析技術

CVD Analysis Technology for Epitaxy Physical Model System

摘要


CyberEpi軟體是一套使用CVD磊晶物理模型分析的系統,CyberEpi軟體套件包括五個主要模組:SimEpi,FlowEpi,OptiEpi,LibEpi和OptiEpi Plus。使用者可以快速驗證磊晶流場與化學反應(SimEpi)耦合模擬效果,並透過創新的流場可視化平台(FlowEpi)和製程參數最佳化(OptiEpi)的精確模型校準。CyberEpi可以作為MOCVD的數位雙向系統,它包括高級專業人員產生的製程累積資料庫(LibEpi)。開發友善資料庫介面數系統,可為那些缺乏基礎多重物理學複雜知識的人們提供了便利。此軟體另一強大的功能是可提供關鍵設備設計參數(OptiEpi Plus),如噴灑頭幾何形狀設計,以獲得更高的產量,或指引下一代新設備的開發,以增強製程能力。

並列摘要


The CyberEpi software suite includes five main modules: SimEpi, FlowEpi, OptiEpi, LibEpi, and OptiEpi Plus. Users can quickly conduct the coupling simulations of epitaxial flows and chemical reactions (SimEpi) through precise model calibration using an innovative flow visualization platform (FlowEpi), and process parameter optimization (OptiEpi) of deposition experiments. CyberEpi can serve as a digital twin system of MOCVD. It includes a process database (LibEpi) generated by high-level professionals. The generation of the database allows further development of a user-friendly interface for those lacking detailed knowledge of the underlying multi-physics. The most advanced feature enables the user to extract the key equipment design parameters (OptiEpi Plus) such as showerhead geometries for higher yield, or to guide the development of next generation equipment with enhanced process capability.

並列關鍵字

Digitization Epitaxy MOCVD

參考文獻


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Masi, M.,Cavallotti, C.,Radaelli, G.,Carra, S.(1997).Kinetics of indium phosphide epitaxial growth using metal organic precursors.Crystal Research and Technology.32,1125-1136.
Theodoropoulos, C.,Ingle, N.,Mountziaris, T.,Chen, Z. Y.,Liu, P.,Kioseoglou, G.(1995).Kinetic and transport modeling of the metallorganic chemical vapor deposition of InP from trimethylindium and phosphine and comparison with experiments.Journal of The Electrochemical Society.142,2086-2094.
Chen, C.,Liu, H.,Steigerwald, D.,Imler, W.,Kuo, C.,Craford, M.(1996).A study of parasitic reactions between NH3 and TMGa or TMAI.Journal of electronic materials.25,1004-1008.
Karpov, S. Y.(2003).Advances in the Modeling of MOVPE Processes.Journal of crystal growth.248,1-7.

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