The key to develop probe cards required for testing high-end emerging semiconductor products is to increase the probing capability (number and speed) in each test, which is vital in maintaining the competitiveness of Taiwan's semiconductor testing industry. CIS image sensor is one of the semiconductor products with the most growth potential. This article proposes a method for fabricating cantilever micro-electro-mechanical-system (MEMS) probe card. The method first combines MEMS process and alloy electroforming technology to produce high-hardness micro probe needles, and to fabricate 3D ceramic circuit boards using laser metallization technology, followed by a double-sided alignment technology to bond the probe needles to the ceramic circuit board. The probe card can be used to test future ultra-high-resolution CIS sensor wafers to increase the probing test speed.