原子層沉積多成分薄膜填孔與封裝應用

Atomic Layer Deposition of Composite Thin Films and Its Application in Pore-Filling Encapsulation

王亘黼 ； 董福慶 ； 賴識翔

《機械工業雜誌》 471期 (2022/06) Pp. 29-39

摘要

新興相變化記憶體製程朝向多成分薄膜以及縱深填孔技術發展，亟需高深寬比多層數之保形披覆先進奈米薄膜，以因應高容量、高密度電子元件之需求。現有之高速高容量晶片使用物理氣相沉積法沉積薄膜，遭遇高深寬比（10:1）、多成分精準度及鍍膜均勻性困難。然而，綜觀薄膜沉積技術，唯有原子層沉積可生產高度保形膜層。本文將介紹工研院機械所專利之低溫（＜100°C）原子層鍍膜設備，同時導入多模態離散注入前驅物質技術，提升鍍率以及孔隙深入能力，有效達到多成分薄膜填孔均勻性之產業應用規格。

關鍵字

原子層沉積 ； 多成分薄膜 ； 封裝

並列摘要

The manufacturing process for emerging phase-change memory is developing towards composite thin films and pore-filling encapsulation. Conformal deposition of advanced nano-films with high aspect ratio multilayer is urgently needed to meet the needs of high-capacity, high-density electronic devices. The existing high-speed and high-capacity memory devices use physical vapor deposition method to deposit thin films, which encounters difficulties in high aspect ratio (10:1), composite accuracy and conformal coating uniformity. Within all the thin film deposition techniques, only atomic layer deposition can produce highly conformal layers. This article will introduce the low temperature (＜ 100°C) atomic layer deposition equipment patented by MMSL of ITRI; meanwhile the discrete feeding method is adopted to improve the deposition rate and pore filling capability. Through this improvement, the industrial application specifications of pore filling uniformity for composite thin films can be achieved.

並列關鍵字

Atomic layer deposition ； Composite thin film ； Encapsulation

參考文獻

柯志忠、林秀芬、蕭健男，“ 原子層沉積系統設計概念與應用 ”，科儀新知第二十九卷，第1 期，14-25 頁，2007 年。

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Valerio Adinolfi, et al. “Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance,” ACS Nano 13, 10440−10447, 2019.

Tae Joo Park, et al. “Improved growth And electrical properties of atomic-layer-deposited metal-oxide film by discrete feeding method of metal precursor,” Chem. Mater 23, 1654-1658, 2011