極短脈衝雷射壓縮技術與其化合物半導體應用研究

Research on Pulse Compression Technology of Ultrashort Pulse Laser and Its Application of Compound Semiconductor

吳秉翰 ； 李益志 ； 徐尚聿 ； 李姿儀

《機械工業雜誌》 479期 (2023/02) Pp. 20-28

摘要

隨著工業雷射應用之多元化，脈衝雷射需求日趨強烈，但礙於現有技術與材料限制，目前雷射脈衝寬度多落於皮秒或次皮秒等級，本文目標為將工業雷射之頻譜做進一步展寬達飛秒等級之極短脈衝，並應用於現今全球積極搶進的第三代化合物半導體市場，如晶柱切割、晶錠表面／內部改質、焊接及封裝等之精微加工。將脈衝壓縮至飛秒等級之脈衝雷射，於加工應用上使材料於超短脈衝之照射下有別於長脈衝雷射，具非線性光學之吸收特性，可於表面及透明材料內部進行至微米或奈米尺度之超精密加工，對於化合物半導體製程在加工時程及品質上可大幅提升。

關鍵字

極短雷射 ； 脈衝壓縮 ； 化合物半導體改質

並列摘要

With the diversification of industrial lasers applications, the demand for pulsed lasers is becoming increasingly strong. However, due to the limitations of existing technologies and materials, the current laser pulse width is mostly at the level of picosecond or sub-picosecond. The goal of this article is to further broaden the spectrum of industrial lasers to ultra-short pulses of sub-hundred femtosecond level, and apply them to the third-generation compound semiconductor market that is actively entering the world today. Such as laser cutting, laser surface/internal modification of materials, laser welding and laser packaging, etc. The pulse laser that compresses the pulse to the femtosecond level makes the material different from the long pulse laser under irradiation of ultra-short pulse in processing application, and its processing mechanism is different from that of long-pulse laser processing (such as nanosecond, sub-nanosecond or even picosecond level or continuous laser). The ultra-short pulse laser has the absorption characteristics of nonlinear optics, ultra-precision processing to the micron or nanometer scale can be carried out on the surface and inside transparent materials. For the compound semiconductor process, the processing time and quality can be greatly improved. It can be said to be the best solution to the current process cost dilemma.

並列關鍵字

Ultrashort pulse laser ； Pulse compression technology ； Laser modification of compound semiconductor

參考文獻

Q. Chu, L. Li, C. Zhu, Y. Zang, S. Lin, and Y. Han, “Preparation of SiC/Ge/graphene heterostructure on 4H-SiC, Materials Letters, 211, 133-137, 2018.

N. Takeda and H. Morikazu, “Laser processing method,” U.S. Patent US 9209591 B2, 2015.

K. Hirata and Y. Nishino, “Polycrystalline SiCwafer producing method,” U.S. Patent US 9808884B2, 2017.

E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, “4H-SiC wafer slicing by using femtosecond laser double-pulses,” Optical Materials Express, 7(7), 2050-2460, 2017.

X. Xie, Q. Peng, G. Chen, J. Li, J. Long, and G. Pan, “Femtosecond laser modification of silicon carbide substrates and its influence on CMP process,”Ceramics International, 47(10), 13322-13330, 2021.