摘要
單晶鑽石被認為是下一代功率元件的理想材料。在本文中，將使用以空氣為主要氣體和過氧化氫為反應前趨物的常壓等離子體系統生成羥基改質藍寶石拋光墊，再透過拋光機下承載盤的旋轉運動，使羥基改質後的藍寶石拋光墊與單晶鑽石表面發生反應，而達到單晶鑽石拋光的效果。為了證明所提出方法的有效性，在室溫下的大氣條件下，使用藍寶石拋光墊在無和有大氣電漿處理的情況下對鑽石進行拋光測試。透過表面形貌量測儀和白光干涉顯微鏡測量和評估材料去除率和表面粗糙度。驗證使用大氣電漿的材料去除率達0.9 μm/hr比沒有大氣電漿照射的材料去除率（0.085 - 0.12 μm/hr）高大約九倍。拋光後表面粗糙度從70 nm降低到5 nm。
並列摘要
Single-crystal diamond is considered an ideal material for next-generation power devices. In this article, an atmospheric plasma system using air as the main gas and hydrogen peroxide as the reaction precursor will be used to generate hydroxyl groups. The generated hydroxyl groups will then be transmitted through a sapphire polishing pad and react with the single-crystal diamond surface to achieve diamond polishing. To demonstrate the effectiveness of the proposed method, a sapphire polishing plate was used to polish diamond substrates with and without plasma irradiation under atmospheric conditions at room temperature. The surface material removal rate and roughness were measured and evaluated using a surface profiler and white light interferometric microscopy. The results verify that the material removal rate with atmospheric plasma treatment is approximately 0.9 μm/hr, which is about nine times higher than the material removal rate without atmospheric plasma exposure (0.085 - 0.12 μm/hr). The surface roughness after polishing is reduced from 70 nm to 5 nm.