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MODELING OF TRAPS CONCENTRATION AND ELECTRIC FIELD DEGRADATION IMPACT ON CARRIERS MOBILITY IN ORGANIC MATERIAL BASED TRANSISTOR

摘要


In this paper, new - improved carriers mobility model of OFET (Organic Field Effect Transistor) structures is presented. It is proposed to introduce two new factors: traps concentration ratio and electric field degradation factor, in carriers mobility model. The imact of OFET geometry is also considered. The above-mentioned model includes also carriers mobility dependence on temperature and electric field. Proposed model is incorporated in current-voltage characteristics of OFET.

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