IGZO/ZTO Thin Film Transistors With Double Channel Structures

具有雙通道結構的IGZO/ZTO TFT

翁晉笠(Jin-Li Weng)

《國立高雄科技大學學報》 2卷 (2020/07) Pp. 83-91

https://doi.org/10.6912/JNKUST.202007_2.0005

摘要

The device characteristics of indium gallium zinc oxide (IGZO)/zinc-tin oxide (ZTO) thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 20.4 cm^2/Vs in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at appropriate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

關鍵字

indium gallium zinc oxide ； zinc-tin oxide ； double insulating layer ； double channel layer

並列摘要

研究了具有調製通道的氧化銦鎵鋅（indium gallium zinc oxide, IGZO）／鋅錫氧化物（zinc-tin oxide, ZTO）薄膜晶體管（thin film transistor, TFT）的器件特性。在通道調製的TFT中，場效應遷移率提高到20.4 cm^2/Vs。透過在通道／柵極絕緣體界面處插入高載流子濃度層，可以改善TFT器件的電性能。這是由於載流子積累的增加和通過通道調製的寄生電阻的降低。將臨界電壓值控制在適當的值。這些結果表明，透過調製的通道結構可以增強TFT的器件特性。

並列關鍵字

氧化銦鎵鋅 ； 鋅錫氧化物 ； 雙層絕緣層 ； 雙層通道層