透過您的圖書館登入
IP:216.73.216.60
  • 期刊

Study of Remote Epitaxial Interaction Mechanism based on Magnetic Substrates

摘要


In recent years, the remote epitaxy method has been widely used for the growth of high-quality two‐dimensional thin film materials. The main idea is to realize the remote interaction between the polar substrate and the epitaxial layer by adding graphene as a buffer layer between the polar substrate and the epitaxial layer with the help of the translucency of graphene to the strongly polarized electric field. In this paper, by replacing the polar substrate with a nonpolar magnetic substrate in the remote epitaxy method, we propose a new idea of epitaxial growth: remote interaction based on the magnetization of the atoms of the epitaxial layer by the magnetic substrate through graphene. First principles calculations show that the remote magnetization of epitaxial bismuth metal by magnetic nickel (111) substrate through graphene significantly improves its adsorption on monolayer graphene, indicating the feasibility of this new remote epitaxial growth idea.

參考文獻


Koma A, Yoshimura, K. Ultrasharp interfaces grown with Van der Waals epitaxy. Surface Science, (1986),174(1-3), 556-560.
Koma A. Papers presented at the International Workshop on Science and Technology of Thin Films for the 21st Century, Evanston, IL, USA, July 28–August 2, 1991 Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system[J]. Thin Solid Films, 1992, 216: 72-76.
Kim H, Kim J C, Jeong Y, et al. Role of transferred graphene on atomic interaction of GaAs for remote epitaxy[J]. Journal of Applied Physics, 2021, 130(17): 174901.
Qi Y, Wang Y, Pang Z, et al. Fast growth of strain-free AlN on graphene-buffered sapphire[J]. Journal of the American Chemical Society, 2018, 140(38): 11935-11941.
Journot T, Okuno H, Mollard N, et al. Remote epitaxy using graphene enables growth of stress-free GaN[J]. Nanotechnology, 2019, 30(50): 505603.

延伸閱讀