- 期刊
- OpenAccess
The Large Size Wafer Study of Chemical Mechanical Polishing
大尺寸晶圓之化學機械研磨研究
摘要
Chemical mechanical polishing CMP is currently the only method that can offer a complete planarization VLSI production technique. This paper uses a CMP process simulation machine and applies gray scale image method to acquire a CCD image which is processed by software Optimas treatment. This method can estimate the amount and distribution of polishing slurry injected between the wafer and the polishing pad. With this technique, this paper proposes an optimal slurry injection study for CMP large-sized wafers. The experiment shows that the optimal slurry injection position for 12-inch wafers is IP<30%. For injection amount at low speeds, Q=100-150 ml/min is suggested while at high speeds, Q>200 ml/min can be used. Moreover, how the changes in distance between the wafer and the polishing pad center to affect gray scale and non-uniformity are studied. Experimental data indicate that when the wafer edge extends beyond the center of the polishing pad, this can increase polishing pad rotation speed and achieve the removal rate of those, which do not extend beyond the central periphery. However, extending beyond the center will affect the transmission efficiency of the slurry. Thus, it is suggested that the optimal distance extending from the center should be R_(we)<3cm.
並列摘要
化學機械研磨簡稱CMP，是現在唯一能夠提供VLSI製程全面平坦化的技術。本文以一CMP流場模擬機，採用灰階度方法將CCD影像圖由影像擷取軟體處理，使用這種技術可估算出進入晶圓與研磨墊間之研磨液的量與其分布。利用這個技術，本文提出大尺寸晶圓之化學機械研磨研究。實驗顯示12吋晶圓之研磨液最佳注入位置為IP<30%。最佳注入量在低轉速下建議使用注入量Q=100－150 ml/min，而在高轉速下建議使用Q>200 ml/min的流量。此外亦研究改變晶圓與研磨墊中心距離對灰階度與非均勻性的影響。實驗數據顯示，晶圓邊緣跨越研磨墊中心距離時，可藉著提高研磨墊轉速而達到與未跨中心相近的移除率，但是跨越中心會影響研磨液的傳遞效率。因此建議跨越中心距離R_(we)<3cm有最佳的效果。