- 學位論文
奈米碳管應用於背面供電網路技術的潛在熱優勢
The lPotential Thermal Advantages of Carbon Nanotubes Application in Backside Power Deivery Network Technology
摘要
本論文探討了奈米碳管（Carbon Nano-tubes；CNTs）作為導電材料應用於背面供電網路技術（Backside power delivery network；BSPDN）的散熱潛力以及熱應力優勢。研究中的奈米碳管是藉由兩種製程方式所生長的：浮動式催化劑化學氣相沉積（Floating Catalyst Chemical Vapor Deposition；FCCVD）與金屬薄膜催化劑化學氣相沉積（Metal film Catalyst Chemical Vapor Deposition；MCCVD），並透過高溫退火改善其品質。經由三倍頻熱傳導值量測系統、拉曼光譜分析儀器量測奈米碳管熱傳導值與品質，結果顯示使用浮動式催化劑所生長的奈米碳管相比於使用金屬薄膜催化劑所生長的奈米碳管具有較高的熱傳導值與品質，並經由高溫退火後能夠得到進一步的提升。 此外，本論文也藉由商用有限元素分析軟體（Ansys Workbench）的熱、應力分析軟體來評估奈米碳管應用於背面供電網路技術的可行性，根據熱模擬的結果顯示奈米碳管應用於背面供電網路技術的背面金屬導線中，相比於傳統的鎢（W）或是銅（Cu）金屬，奈米碳管則具有較佳的散熱表現以及減少材料間因為熱膨脹係數（Coefficient of Thermal Expansion；CTE）不匹配所引發的熱應力，因此驗證奈米碳管作為導線材料，在未來具有極高的潛力能夠改善電晶體製程節點技術提升所引發的熱問題並延續摩爾定律（Moore''s law）的發展。
並列摘要
This study explores the thermal dissipation potential and thermal stress advantages of Carbon Nano-tubes (CNTs) in Backside power delivery network (BSPDN). CNTs were grown via Floating Catalyst Chemical Vapor Deposition (FCCVD) and Metal film Catalyst Chemical Vapor Deposition (MCCVD), with quality improved through high-temperature annealing. Measurements using a 3-omega thermal conductivity (k) value measurement system and Raman spectroscopy show that FCCVD-grown CNTs exhibit superior k value and quality compared to MCCVD-grown ones, further enhanced by high-temperature annealing. Additionally, a commercial FEM simulation software (Ansys Workbench) was used to assess the feasibility of CNTs in BSPDN structures. Thermal simulation results indicate that CNTs applied in the backside metal layer of BSPDN offer better heat dissipation and reduced thermal stress compared to traditional tungsten (W) or copper (Cu) metals. This validates CNTs'' potential to address thermal challenges in transistor process node advancements, thus continuing the progression of Moore''s law.