- 學位論文
矽基紅外光偵測技術與效率之提升與研究
The investigation of improving Silicon-based Infrared detecting technology and efficiency
摘要
隨著19世紀急速工業化發展以來，人口快速增加以及工業急遽的發展，汙染物的排放量也於人類的歷史中前所未見的，環境中的不可見、不可聞之汙染對人類產生不可忽視的影響。隨身、高可靠度之光譜檢測裝置在未來安全舒適的生活中有極大之商品潛力，本論文將探討光譜偵測技術中最為重要且昂貴之紅外光偵測器，並且研究如何提升矽基金屬半導體於近-中紅外的偵測效率。由於所使用之製程技術與材料為矽基半導體，對於擁有先進製程技術與完整供應鏈之台灣，能大幅將低偵測元件製程成本，使其有望能取代目前常用之三五族半導體偵測器。 本論文研究主題將圍繞於平面型金屬-半導的蕭特基能障二極體偵測元件、週期性倒置式金字塔結構所引發之局域表面電漿共振現象與應用熱載子效應於提升元件中紅外波段響應速度。透過對平面型銅/p-型二極體偵測器之歐姆接觸快速熱退火處理與脈衝式偏壓量測方式，成功製作出電性表現極優良，於1550奈米光通訊常用之波長偵測響應可達1.69 (mA/W)於0偏壓時。 除此之外，本研究將此平面型光偵測元件導入局域表面電漿共振結構，全面提升元件之近紅外光電響應表現，並且對比商用型InGaAs偵測器，於短波紅外波段就有良好偵測性能。由於金字塔結構具有超寬頻局域表面電漿共振之特性，此研究突破傳統蕭特基能障元件截止截止波長偵測極限，成功量測到中紅外訊號。 另外於導入熱載子效應於提升中紅外光子偵測之響應速度，於本研究也有初步成果，顯示熱載子效應於金屬-半導之蕭特基能障二極體可行性。本論文對於近-中紅外偵測之結果可望為後續發展之氣體濃度偵測器與取代光譜分析儀器組件奠定良好研究基礎。
並列摘要
Due to rapid industrialization since the late 19th century, the increasing emission of pollutants has been a cause of great concern. Therefore, a portable, high-reliability spectrum detection device for identifying these pollutants and their concentrations could have a high commercial potential in the industry. This research explores the most expensive component in spectrum detection technology, infrared detectors, and studies how to improve the efficiency of silicon-based metal semiconductors in Near-to-Mid infrared band. The cost of silicon-based semiconductors used currently, can be reduced significantly. The detector built in this research is expected to replace the ubiquitous but expensive III-V compound semiconductor detectors. This thesis will mainly focus on three topics: the planar metal-semiconductor Schottky barrier diode photodetector, the local surface plasma resonance phenomenon of periodic inverted pyramid structure and the application of the hot carrier effect in metal-semiconductor to increase the response time of Mid-IR band. For copper/p-type silicon schottky diode photodetector, rapid thermal annealing treatment on Ohmic contact and voltage pulsed measurement method were applied to enhance the responsivity of the device in the optical communication band. The response can go as high as 1.69 (mA/W) at 0 V bias for 1550 nm radiation. In addition, this study introduces localized surface plasma resonance structure into the planar detector, which comprehensively enhances the short-wavelength IR photoelectric performance in comparison with the commercial InGaAs detector. Due to the ultra-wideband characteristics of this inverted pyramid structure, this research breaks through the detection limit of the traditional Schottky barrier cut-off wavelength, and successfully measures the mid-infrared response signal. Furthermore, a preliminary study of the introduction of the hot carrier effect to enhance the response speed of mid-infrared photon detection has been conducted, depicting the feasibility of the hot carrier effect on the metal-semiconductor Schottky barrier diode. The results of the near-mid-infrared detection in this thesis are expected to lay a good foundation for the development of gas sensing equipment and substitute conventional spectral analysis instrument components.