- 學位論文
基於調諧質量阻尼器之CMOS-MEMS模態局部化電壓感測器
CMOS-MEMS Tuned-Mass-Damper(TMD) Based Mode-Localized Volmeters
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摘要
本研究於CMOS-MEMS 0.35-µm製程平台利用基於調諧質量阻尼器(Tuned-Mass-Damper)之模態局部化結構，設計並製作了微機械電壓感測器。本研究之電壓感測器以兩端固定樑(clamped-clamped beam)為主要之共振器，其旁邊嵌入微小型懸臂樑，用來作為抗諧振調諧質量阻尼器之結構，成功地衰減了基模之頻率響應。 本研究之感測機制為給予一輸入電壓以造成剛度變化來擾動基於調諧質量阻尼器之模態局部化共振器。當感測電壓施加至感測電極時，模態局部化共振器會受到剛度擾動，進而導致模態發生劇烈變化，使達成模態局部化(mode-localization)之效果。此外，本研究建立理論模型來分析微小型懸臂樑之參數變化對於頻率響應曲線所造成之影響。此微小型調諧質量阻尼器懸臂樑與傳統之模態局部化共振器相比較，具有更小之等效質量與剛度，並且在給定一特定擾動下，會響應更大之模態局部化效應及達到更高之靈敏度。 在本研究中，實驗結果驗證模態局部化電壓感測器加入微小剛度擾動至懸臂樑後，元件之振幅變化靈敏度高達3,035,810 ppm/V，與共振頻率變化之靈敏度(3,376 ppm/V)相差約900倍。另一方面，本研究在單一共振器的設計上使用微小型之調諧質量阻尼器結構，而非使用傳統的兩個或多個相同之對稱耦合結構[1]。因此，本研究提出一種更簡單的結構設計，其感應之結構占用空間小了約55倍。最後，本研究可將此基於調諧質量阻尼器之模態局部化共振器作為電壓感測器，應用於實驗室之微小電訊號檢測。
並列摘要
This research demonstrates a micromechanical voltmeter, utilizing a tuned-mass-damper (TMD) based mode-localized structure in a CMOS-MEMS 0.35-µm 2P4M process platform. The TMD voltmeter consists of a micromechanical clamped-clamped beam (CC-beam) as a main resonator and a miniaturized T-shaped TMD structure with properly designed dimensions on the side acting as two cantilevers operating at the same frequency of the CC-beam, successfully attenuate the frequency response of the fundamental mode. The mechanism of this work is to introduce the TMD resonator with a stiffness perturbation by the input sensing voltage. The mode-localization effect is caused by the electrical stiffness that is introduced into the resonator when a sensing voltage is applied to the sensing electrode. This research also used a theoretical model to simulate the varying parameters of the miniaturized TMD cantilevers resulting in the frequency response of the resonator. In comparison to conventional mode-localized resonators, the miniaturized TMD design has a smaller effective mass and stiffness and would respond to a stronger mode localization effect under a specific perturbation and attain higher sensitivity. In this research, the measured results show that the amplitude deviation reaches 3,035,810 ppm/V, which is 900 times greater than the resonance frequency variation of 3,376 ppm/V when a sensing voltage is applied to alter the stiffness of the TMD cantilever beams. On the other hand, this research presents a simpler structural design with 55× smaller footprints. Instead of two or more identical resonators used in the conventional counterparts, the use of the tuned-mass-damper (TMD) asymmetrical structures would not only reserve the area of the device due to simple coupled structural topologies but also enable higher sensitivity due to the miniaturized TMDs. Thus, the TMD sensors can be integrated to build on-chip voltmeters for laboratory-based weak electrical detection.
參考文獻
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