- 學位論文
100nm精密對位之莫瑞條紋分析及13.5nm極紫外光光罩缺陷檢測
Accurate alignment of Moiré fringe within 100 nm and photomask defect detection by 13.5 nm extreme ultraviolet
摘要
在0.1μm的精準度之下，使用紅外光直接對準法所進行奈米級的光學檢測，光學系統可以通過條紋的放大特性直接檢測到莫瑞條紋。以直線型光柵分析x方向的偏移量、繞 z 軸的偏轉角，以方形中心對稱光柵分析 x、y 方向的偏移量，使用低通濾波器及快速傅立葉變換的方法來分析圖像的頻域項。在測量兩條紋的峰值的位置後，計算出兩個晶圓之間的偏移誤差量。 建構同調散射顯微鏡在 EUV 光罩檢測系統及雙軸平台的研發，以光點500μm之下量測到訊號光源及缺陷的繞射圖形，提供日後快速與高解析光罩之缺陷檢測。
並列摘要
Under the accurate alignment of 0.1μm, The optical system is used to infrared light directly alignment method which can be used for nano-level detection. The optical system can directly detect the Moiré fringes through the amplification characteristics of the fringes. Linear grating is for analyzing deviation of x and z. The square center symmetric grating is for analyzing deviation of x and y. We apply a low-pass filter to take out the high-frequency terms with using approach of fast Fourier transform to analyze the frequency terms of the gray value. After measuring the positions of peaks and valleys, we can calculate the practical displacement of two wafers. The construction of a coherent scattering microscope was developed in the EUV mask inspection system and dual-axis platform. The diffraction pattern of the signal light source and the defect were measured under a light spot of 500μm, providing rapid and high-resolution mask defect detection in the future. The construction of a coherent scattering microscope was developed in the EUV mask inspection system and dual-axis platform. The diffraction pattern of the signal light source and the defect were measured under a light spot of 500μm, providing rapid and high-resolution mask defect detection in the future.