透過您的圖書館登入
IP:18.223.28.135
  • 學位論文

奈米碳管在微米與奈米尺度矽穿孔技術的優勢及其運用

The Advantages and Applications of Carbon Nano-Tubes as Through Silicon Via at the Micro- and Nanoscale

指導教授 : 廖洺漢

摘要


矽穿孔是實現三維積體電路的關鍵技術,可將同質或異質晶片以高性能且高密度的方式堆疊。為了更精確分析矽穿孔在高頻訊號傳輸下的電特性,勢必考慮集膚效應和表面粗糙度效應所造成的影響,然而這些效應會使矽穿孔在高頻率訊號傳輸下的等效電阻大幅增加,因此突顯了研究具有較小集膚效應的奈米碳管矽穿孔之重要性。此外,PowerVia是一項開創性的背面供電技術,可解決訊號干擾和金屬佈線所遇到的瓶頸。我們提出將奈米碳管應用於奈米矽穿孔以實現 Power-Via 技術所帶來的優勢。 本論文分析了奈米碳管應用於微米與奈米尺度下的矽穿孔技術之電特性,並展現其與傳統填充材料相比的優勢。此外,我們還提出了矽穿孔及其多層結構的等效電路模型,以模擬不同矽穿孔尺寸和堆疊層數的電特性。由於奈米碳管的等效電阻較低,使其在高速傳輸、功耗和訊號完整性方面都優於傳統填充材料之矽穿孔。除此之外,將奈米碳管作為奈米矽穿孔可以克服當前奈米矽穿孔的電流聚集問題。綜上所述,奈米碳管有很高的潛力可用於高速傳輸和Power-Via技術的新矽穿孔填充材料。

並列摘要


Through silicon via (TSV) is the key technology for three-dimensional integrated circuits (3DICs) which could vertically stack homogeneous or heterogeneous dies with high performance and density. To evaluate the electrical characteristics of TSV at the high-frequency transmission, the skin effect and surface roughness effect are necessary to be considered. However, these effects would significantly result in the increase of TSV equivalent resistance under the high operating frequency. Thus, it is important to investigate the carbon nano-tubes (CNTs) TSV which has less skin effect intrinsically. Furthermore, PowerVia is a seminal technology for the back-side power delivery that may solve the interconnect bottleneck problem in the signal interference and the complexity of metal routing. We propose the CNTs as nano-through silicon via (n-TSV) to achieve the advantages in the Power-Via technology. In this work, we analyze the advantage of CNTs as TSV compared to the conventional filling materials at the micro- and nanoscale. Furtherly, we also propose the equivalent circuit model of TSV and its multi-layer structure to simulate the electrical behaviors with different TSV dimensions and stacking layers. It can be found that CNTs TSV has more benefits in high-speed transmission, power consumption, and signal integrity than conventional TSV due to the lower equivalent resistance. Moreover, CNTs n-TSV can overcome the current crowding problem in n-TSV. In summary, CNTs could be a promising TSV filling material for high-speed transmission and Power-Via technology.

參考文獻


[1] G. E. Moore, “Cramming More Components Onto Integrated Circuits,” Proceedings of the IEEE, vol. 86, no. 1, pp. 82-85, Jan. 1998.
[2] “Moore’s Law – Now and in the Future”
(https://www.intel.com/content/www/us/en/newsroom/opinion/moore-law-now-and-in-the-future.html#gs.zjeaip) (2022/05/10)
[3] A. Chaudhry and M. J. Kumar, “Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review,” IEEE Transactions on Device and Materials Reliability, vol. 4, no. 1, pp. 99-109, Mar. 2004.
[4] “Quantum tunnelling”

延伸閱讀