- 學位論文
使用疏水性聚合物製成具有區域選擇性的有機-無機鈣鈦礦光吸收膜應用於半透明光伏元件
Area-selective coating of organic-inorganic hybrid perovskite photo-absorber films for semitransparent photovoltaic devices using hydrophobic polymer patterns
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摘要
近年來，半透明有機-無機混合鈣鈦礦太陽能電池（STPSC）因其在串聯太陽能電池和建築一體化光伏發電等多功能應用方面受到廣泛關注。本研究開發了一種簡便的區域選擇性塗層方法，利用絲網印刷的環烯烴共聚物（COC）圖案來製造半透明有機-無機混合鈣鈦礦太陽能電池元件。該COC圖案具有高度透明性，且與用於塗層的鈣鈦礦前驅溶液具有低親和力。在塗層過程中，鈣鈦礦前驅溶液僅在未被COC圖案佔據的區域進行塗佈沉積，使元件部分區域透明。經過旋塗和狹縫模頭塗佈法在COC圖案上塗佈鈣鈦礦層的測試中，狹縫模頭塗佈方法顯示出更適合的特性，因其具有較慢的塗佈速度，提供足夠的時間使鈣鈦礦前驅溶液在乾燥之前被COC圖案引導。通過優化的狹縫模頭塗佈速度（3 mm/s），鈣鈦礦層獲得了接近理想的面積選擇性，其平均可見光透射率（AVT）最高可達到40%。為了克服優化區域選擇性所需的緩慢塗佈速度對鈣鈦礦層結晶的負面影響，調整了鈣鈦礦前驅溶液的溶劑組成，結果在二甲基甲醯胺（DMF）和二甲基亞碸（DMSO）為9:1的比例可以獲得最佳參數。此外，為了克服一次狹縫模頭塗佈只沉積薄薄一層鈣鈦礦層的缺點，測試了兩次狹縫模頭塗佈方法。研究發現，兩次塗佈之間的延遲時間是影響面積選擇性和鈣鈦礦質量的重要因素，消除延遲時間保留了單次塗佈法的最佳面積選擇性，同時提高了所得鈣鈦礦層的結晶度。通過優化塗佈速度、溶劑混合物和塗佈次數，使用COC輔助區域選擇性塗佈方法製造的STPSCs獲得了平均PCE為4.67%，乘以平均AVT值得到平均光利用率（LUE）值為1.70%，本研究所得的結果令人滿意，但仍存在改進的空間。
並列摘要
Semi-transparent organic-inorganic hybrid perovskite solar cells (PSC) have gained significant attention in recent years because of their versatile applications such as in tandem solar cells and building-integrated photovoltaics. This study develops a facile area-selective coating method for fabricating semi-transparent organic-inorganic hybrid PSC devices by utilizing screen-printed cyclic olefin copolymer (COC) patterns—which were highly transparent and of low affinity to the perovskite precursor solution used for coating the absorber layer of the PSC devices—to guide the perovskite precursor solution to only coat the areas not occupied by the COC patterns, rendering the total device area partially transparent owing to the non-perovskite-coated COC patterns. Both spin coating and slot-die coating methods were tested for coating the perovskite layer on the COC patterns, of which slot-die coating was found to be more suitable because it allowed slower coating speeds, which provided sufficient time for the perovskite precursor solution to be guided away by the COC patterns before it was dried. With an optimized slot-die coating speed of 3 mm/s, close to ideal area-selectivity was obtained for the perovskite layer, which achieved a maximum of 40% average visible transmittance (AVT). To counter the negative effect of the slow coating speed required for optimizing area-selectivity on the crystallization of the perovskite layer, the solvent composition of the perovskite precursor solution was adjusted, with the optimum found to be a 9:1 mixture of dimethylformamide (DMF): dimethylsulfoxide (DMSO). Additionally, to counter another limitation posed by the requirement of area-selectivity, which was that the thickness of the perovskite layer coated by one slot-die coating pass needed to be sufficiently small, slot-die coating with two passes was tested to bring the thickness of the perovskite layer closer to optimum. It was found that the delay time between the two passes was a significant factor affecting the area-selectivity and perovskite quality and that eliminating the delay time retained the optimal area-selectivity of the one-pass process while improving the crystallinity of the resultant perovskite layer. With the optimized coating speed, solvent mixture, and coating passes, PSC devices fabricated with the COC-aided area-selective coating method obtained an average PCE of 4.67%, which when multiplied by the AVT value produced an average light utilization efficiency (LUE) value of 1.70%.
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