- 學位論文
應用於第五代行動通訊系統之毫米波相移器研究
Research on Millimeter-Wave Phase Shifter for the Fifth Generation Mobile Communication
摘要
本論文主要分為兩個部分，都是應用於第五代行動通訊系統的毫米波寬頻相移器。 第一部分呈現了使用90奈米互補式金氧半場效電晶體製程設計的寬頻5位元向量合成相移器。首先，設計一個具有低振幅不平衡特性的寬頻正交信號產生器。接著，具有反相能力之可變增益放大器的匹配網絡採用等效磁耦合共振腔來達到寬頻的小訊號增益。此外，採用消除電晶體寄生電容的技術來減少可變增益放大器在不同增益狀態下的相位變化。可變增益放大器的增益控制範圍能夠讓向量合成相移器擁有11.25°的解析度。此電路具有寬頻的增益特性、5位元的解析度以及低的方均根相位誤差和振幅誤差。 第二部分呈現了使用40奈米互補式金氧半場效電晶體製程設計的Ka頻段雙向相移器。此相移器由一個傳輸線相移器和一個有半週期相移及損耗補償能力的雙向可變增益放大器組成。論文將敘述兩個子電路和雙向相移器的完整設計過程以及設計挑戰，包括雙向設計、相位調變範圍、增益控制範圍和損耗補償。
並列摘要
This thesis consists of two main parts, both of which are millimeter-wave phase shifters for fifth-generation mobile communication system. In the first part, a wide-band 5-bit vector-sum phase shifter implemented in 90-nm CMOS process is presented. First, a wide-band quadrature generator with low amplitude imbalance is designed. Then, the magnetically coupled resonator is used to design wide-band matching networks of variable gain amplifiers with half-cycle phase shift capability. Furthermore, a technique for eliminating the parasitic capacitor of the transistor is employed to decrease the phase variation of variable gain amplifiers in different gain states. The gain control range of the variable gain amplifier is sufficient to provide a resolution of 11.25°. As a result, the 5-bit phase shifter has a wide-band gain performance as well as low root-mean-square phase and amplitude errors. In the second part, a Ka-band bi-directional phase shifter fabricated in 40-nm CMOS process is presented. This phase shifter comprises a transmission line phase shifter and a bi-directional variable gain amplifier with half-cycle phase shift and loss compensation abilities. This chapter demonstrates the design process of two subcircuits and the bi-directional phase shifter, as well as difficulties such as bi-directional design, phase tuning range, gain control range, and loss compensation.