- 學位論文
電子束微影之快速顯影技術探討
The Research of Rapid Development Technology in Electron Beam Lithography
摘要
本篇論文主要目的是利用快速顯影的方式來縮減鄰近效應。透過實驗，我們發現了在正向散射的電子當中，又包含了高能量與低能量之兩種不同的電子，在傳統的認知裡面，並沒有這樣的概念，更沒有進一步的把它們分離出來。其中高能量電子我們稱之為Forward scattered primary beam，它是能量極高且散射角度極小的電子束，而低能量電子則是Primary beam撞擊阻劑中之原子所產生之二次電子。 我們透過顯影機制推論得知，顯影速率會隨著能量分布而改變，因此我們提出高斯圓的實驗方法，利用電子束曝光之單點微影圖形在不同顯影時間下計算顯影速率，進而找出能量分布，定義出Forward scattered primary beam的範圍，接著控制劑量，利用快速顯影的方式，使顯影範圍控制在Forward scattered primary beam的曝光部分，透過此方法，我們藉由縮短顯影時間去限制圖形的顯影範圍有效控制圖形之大小。 透過實驗，我們估算利用快速顯影的方式，可以縮減大約60%的鄰近效應，並且在相同的參數下曝光line array，線寬大約縮減了50%來到15.6奈米。
並列摘要
In this study, we want to reduce the proximity effect in electron beam lithography (EBL) by using rapid development. From our experiments, we found that in the forward scattering, there are two different electrons. One is low energy, the other is high energy. There is no such concept before, and no one has ever separated them. The high energy electron we called forward scattered primary beam. And the low energy electron is the secondary electron which is bombarded by the primary beam when it inject in the photoresist. We inference the developing rate will follow the electron energy profile due to the developing mechanism. So we have established an experiment of single spot to measure the radius under different developing time in electron beam lithography. By linking the beam energy and developing rate, we are able to find out the developing rate function. And then we can define the region of forward scattered primary beam. By using rapid developing, we can confine the developing area in forward scattered primary beam region. And the proximity effect will be greatly reduced. Finally, we estimated that we can reduce the proximity effect over 60% by using the rapid developing method. And we exposure line arrays, the linewidth decreases over 50% to 15.6nm.