近年來電子產業的快速發展,使得量測儀器的需求與產值連年提升,其價格又與頻寬及取樣率成正比,但是其供應商大多為國外大廠,為了提升國內量測儀器相關產業的競爭力,必須開發自己的量測儀系統相關技術。本論文除了分析不同探棒之間的優缺點與架構之外,更提出了十倍衰減主動式探棒電路原型的設計,當中包含了衰減器電路與緩衝放大器。緩衝放大器的架構分別使用超級源極追隨器與互補式源極追隨器,分別希望能達到寬頻與高輸入電壓範圍的表現,亦加入偏移電壓校正電路,期望能消除在輸出電壓的偏移值。 本篇論文下線均使用0.18微米1P6M互補式金屬氧化物半導體製程所實現。第一次的下線晶片面積大小為261 um x 279 um,在量測結果上,主動式探棒系統的頻寬達到2.7 GHz,輸入電壓範圍則從-1 V到6 V。第二次下線的晶片面積則為570 um x 370 um,量測結果顯示主動式探棒系統頻寬為1.7 GHz ,輸入電壓範圍為0.5 V到5 V。
As the extremely rapid development of electronic industry, the demand for measurement equipment and it’s related commercial value obviously increase year by year. However, most measurement equipment in the market is made by foreign manufacturers, such as Agilent and Tektronix Technology. In order to enhance the competitiveness of domestic measurement instruments industries, we must develop our own technologies and system in this field. Above all, the two crucial specifications which impact the price and margin of digital oscilloscope are bandwidth and sampling rate. In this thesis, the advantages and disadvantages are analyzed between different probes. Also, a prototype of 10X active probe is proposed. There are two parts in the prototype of active probe, attenuation circuit and buffer amplifier. Using the architecture of super source follower and complementary source follower, the buffer amplifier is demonstrated to achieve wideband and high input voltage range. In the second work, an offset voltage calibration circuit is used to reduce the offset voltage in output at the same time. All of chip designed in this thesis are implemented in 0.18 m 1P6M CMOS process.The measured -3dB bandwidth can achieve 2.7 GHz and the input voltage range from -1 V to 6 V in the first work. The chip size is 261 um x 279 um. In the second work, the measurement results show that the active probe system bandwidth achieve 1.7 GHz, and the input voltage range from 0.5 V to 5 V. The chip size is 570 um x 370 um.