摘要
本論文的目的在於研究奈米墨水筆(Dip-pen nanolithography) 的物理模型。首先，我們對所使用的基板進行粗糙的分析和比較，進行DPN實驗用的基板，除了需要擁有很小的粗糙度之外，高原狀的平坦結構也是必須的。有高原狀的結構才能讓墨水分子在基板上形成結構穩定的分子層。接著，我們探討 AFM 針尖上的墨水分子沾附上基板的機制，以及在不同的針尖速度下線寬以及點的大小的變化，另外，改變溼度的條件，觀察畫出的奈米結構在不同的濕度下變化的情形，即觀察墨水筆在不同溼度條件下擴散速率的變化，發現，和Weeks等人的所做的實驗結果相符，擴散係數隨著速度變慢也會慢慢的減緩。另外，平均線寬隨著溼度的降低，也有跟著降低的趨勢。主要的原因在於MHA為親水性的分子，配合Freund等人利用STM量測在不同溼度下水膜厚度的結果，可以得到合理的解釋。並且，在基板的製作上，我們也做了些許的調整，利用剝離式的金基板取代文獻中蒸鍍式的金基板，我們也在實驗中證實了墨水分子的行為可以在上述這兩種基板上得到相同的結果。 以上的工作，將不同溼度條件下的參數調校出來，以掌握畫出的線寬的解析度，將來，甚至能夠將墨水分子形成的單分子層拿來做為保護金的材料，進行濕式蝕刻，製造奈米金屬導線，量測奈米導線的電性，做進一步的研究。
關鍵字
奈米墨水筆並列摘要
The main purpose of this article is focus on the physical model of Dip-PenNanolithography. First of all, we analysis the roughness of the substrate. The one which is suitable for DPN experiment requires small roughness. The flat structure is also needed to made the ink molecule form the stable self-assembly monolayer on the substrate. Thereafter, we explore the mechanism of the transportation of the ink molecule from the AFM tip to the substrate, and observing the change of diffusion coefficient under different humidity. We find that our result is consistent with which presents by weeks et al. Besides, the decrease of the line width also confirm the disappearing of water layer under low humidity which is in agreement with the result of water layer height by STM measurement from Freund et al. We also instead the evaporated substrate of peel-off substrate in our experiment and replicate the behavior from the same ink-molecule. Therefore, we find that the behavior of ink molecule will not affect by the way we prepared the substrate. Once we have these factors, we can control the resolution of the nanostructures we need. Even, the wet etching can be treated to get the gold nanowire for research use in the future.