- 學位論文
Bi-25In-18Sn熱界面材料之微結構與界面反應研究
Microstructure and Interfacial Reactions of Bi-25In-18Sn Thermal Interface Materials
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摘要
本研究針對熱界面材料Bi-25In-18Sn與各種不同金屬基板間之界面反應機構、介金屬化合物型態、介金屬成長動力學以及基材溶解速率反應學等實驗進行研究，金屬基板方面選用銅、鎳、銀、金基板；另外也藉由SEM、DSC觀察熱界面材料Bi-25In-18Sn之微結構金相組織以及其熔點區間。 在Bi-25In-18Sn與銅基板之界面反應中，其所生成之界面介金屬為Cu6(In,Sn)5，且在高溫觀察到有轉變為Cu3(In,Sn)之傾向，屬於擴散控制反應，活化能為53.782 kJ/mol。與鎳基板之界面反應中，其界面生成物為Ni3(In,Sn)4，反應同樣為擴散控制，活化能為70.01 kJ/mol。與銀基板之界面反應中在界面處可以觀察到Ag2In之生成，且在高溫時其內部Ag含量逐漸上升，有逐漸轉變為Ag3In之趨勢，其介金屬生長規則亦符合拋物線定律，活化能為44.90 kJ/mol。而在與金基板之界面反應中發現100℃時可觀察到AuIn2、AuIn兩相，而在125℃以上則可觀察到由上而下依序為AuIn2、AuIn、Au7In3之三相介金屬層，此三層介金屬之活化能分別為53.94、103.26、103.61 kJ/mol。最後在基材溶解速率反應當中發現銅基材之消耗速率約為鎳基材的五倍左右，而略小於銀基材之消耗速率。
並列摘要
This research is focus on the following parts of thermal interface materials： the mechanism between matrix and different metallic substrates、IMC morphology、IMC growth kinetics and substrates dissolving reaction. Take copper、nickel、silver、gold plate as the metal substrates. Also observe the microstructures of thermal interface materials Bi-25In-18Sn and measure the melting temperature section by SEM and DSC. The intermetallic compound formed at the interface of Bi-25In-18Sn/Cu is Cu6(In,Sn)5 ,and it tends to transform into Cu3(In,Sn) at higher temperature. The growth of the IMC, Cu6(In,Sn)5, is diffusion-controlled, and the activation energy for the growth of Cu6(In,Sn)5 is calculated to be 53.782 KJ/mol. The intermetallic compound formed at the interface of Bi-25In-18Sn/Ni is Ni3(In,Sn)4. The growth of the IMC, Ni3(In,Sn)4, is diffusion-controlled, and the activation energy for the growth of Ni3(In,Sn)4 is calculated to be 70.01 KJ/mol. The intermetallic compound formed at the interface of Bi-25In-18Sn/Ag is Ag2In ,and it tends to transform into Ag3In at higher temperature. The growth of the IMC, Ag2In, is diffusion-controlled, and the activation energy for the growth of Ag2In is calculated to be 44.90 KJ/mol. The intermetallic compound formed at the interface of Bi-25In-18Sn/Au are AuIn2 and AuIn at 100℃, while the intermetallic compound are to be AuIn2、AuIn and Au7In3 above 125℃. The activation energy for the growth of AuIn2、AuIn and Au7In3 is calculated to be 53.94 KJ/mol、103.26 KJ/mol and 103.61 KJ/mol, respectively. Finally, Cu substrate is about five times the consuming rate of the Ni substrate, and is a little smaller than Ag substrate.
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