- 學位論文
紅外光控變色量子點發光二極體
Infrared-controllable color-changing quantum dot light-emitting diode
摘要
近紅外光與可見光的上轉換裝置因有著於可見光與非可見光波段之間轉換的性質，在生醫、光通訊、防護以及影像處理等領域皆具有值得期待的潛力。 在此研究中，我們製作出一個不需整合複數元件的發光二極體，此單一裝置藉由在電動傳輸層中加入硫化鉛量子點，並藉由適當的材料選擇，利用兩種不同的硒化鎘/硫化鋅量子點組成發光層，能在使元件吸收紅外光、改變輸入電流等條件下發出可調頻率之可見光，並能依照施加紅外光之分布、強度來調控發光比例與形狀。此研究呈現之量子點發光二極體可藉由光電雙重調控發光特性，能為量子點裝置的製程提供更為簡便、低耗及高效率的結構設計以滿足更小、更精細的裝置科技需求。
並列摘要
Near infrared (NIR) to visible up-conversion devices have shown the potential of application in the biomedical, optical telecommunication, security, imaging field due to the property of conversion between visible and invisible. This study shows a NIR-to-visible quantum dot light-emitting diode (QLED) with integration by constructing the Lead sulfide (PbS) quantum dots in the hole transport layers. The emission frequency of this QLED is tunable under different input current and power of incident infrared, the ratio and pattern of output can also be tuned. The band structure of the QLED is optimized and aligned with appropriate carrier transport and blocking layer. Two kinds of CdSe quantum dots with different sizes and bandgaps can change the color of emission with different wavelengths. This dual electrical-optical modulated QLED demonstrates a new approach for a compact structure designed on quantum dots with low-cost, simple fabrication via solution-processing.