氮化鎵生長之HVPE反應器模擬與設計

Simulations and Designs for Growth of GaN in the HVPE Reactor

藍文杰(Wen-Chieh Lan)

指導教授 ： 藍崇文

國立臺灣大學/工學院/化學工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.03259

摘要

氫化物氣相磊晶法(Hydride vapor phase epitaxy，HVPE)是生長氮化鎵的一種方式。主要是利用氯化氫和金屬鎵反應產生氫化鎵，再由氫化鎵與氨氣在基材上反應得到氮化鎵的厚膜。本研究主要的目的是透過模擬的方法設計一個HVPE反應器，期望在這個HVPE反應器中，藉由改變基材擺設的位置，以及不同的反應物出口，能得到均勻的氮化鎵生長速度，得到均勻性更好的氮化鎵厚膜。從模擬的結果得到氮化鎵的平均長速大約為100 μm/hr，而基材上最快的長速與最慢的長速差別大約在10%左右，與實驗的結果相差不遠。透過模擬，我們找到ㄧ個最適合的氮化鎵生長的幾何形狀之外，也證明了我們使用的反應機構用在研究氮化鎵的生長方面是可行的。

關鍵字

氮化鎵 ； 氣相磊晶 ； 電腦模擬

並列摘要

The growth of GaN by HVPE is a popular method. HCl reacts with liquid gallium and generates GaCl. Then the reaction of formation of GaN from GaCl and NH3 occurs on the substrate. This study purpose is to design a HVPE reactor with the uniform growth rate by computer simulations. By changing the wafer position and the shower head’s angle we expect to get uniform growth rate in this HVPE reactor. The average growth rate is about 100 μm/hr from results of the simulations. The fastest growth rate on the wafer and the slowest growth rate are comparable. The results form simulations are consistent with the results of the experiments. We not only find an optimistic geometry for growth of GaN, but also the kinetic model we use in this study is suitable for the growth of GaN.

並列關鍵字

HVPE ； GaN ； simulations

參考文獻

[1] O. Ambacher, Growth and Applications of Group III-nitrides,

J. Phys. D 31 (1998) 2653-2710.

[3] A.N. Alexeev, S. Yu. Karpov, Conditions of Excess Liquid Phase Formation during Molecular Beam Epitaxy of III–V Ternary Compounds, J. Crystal Growth 162 (1996) 15-24.

[4] S. Mazumder, S A. Lowry, The Importance of Predicting Rate-Limited Growth for Accurate Modeling of Commercial MOCVD reactors, J. Crystal Growth 224 (2001) 165-174.

[5] W. Seifert, G. Fitzl, E. Butter, Study on the Growth Rate in VPE of GaN, J. Crystal Growth 52 (1981) 257-262.