本實驗利用溶膠-凝膠法、旋轉塗佈法和棒塗法於FTO導電玻璃上製備(P,Si) -TiO2厚膜,並將其組裝成DSSC元件。所製備出的(P,Si)-TiO2厚膜經X-光繞射分析儀、掃描式電子顯微鏡、紫外光-可見光光譜儀、拉曼光譜儀等來了解其結晶相態、晶粒尺寸、膜層表面形態、膜層厚度、可見光穿透度、染料吸附量等。以(P,Si)-TiO2厚膜組裝成之DSSC元件以太陽光模擬器來測得其光電轉化效率。結果顯示隨著(P,Si)-TiO2厚膜厚度的增加其結晶形態維持純的銳鈦礦相態不變,晶粒尺寸也都固定在20 nm,表面結構皆由微米級的二次粒子堆疊而成且具有許多大小不一的裂縫與孔洞。可見光穿透度隨塗佈次數上升而降低,膜層厚度、染料吸附量以及光電轉化效率則是隨塗佈次數增加而上升。當(P,Si)-TiO2膜層厚度達到24m時,所組裝之DSSC元件的光電轉化效率為6.52%,其所對應的開路電壓為0.74V,而閉環電流為18.09 mA/cm2。
The (P,Si)-TiO2 thick films used for DSSCs were synthesized by the sol-gel method, spin coating and bar coating techniques. Effects of film thickness on phase contents, grain growth, surface morpholopy, visible light transmittance and dye loading were investigated using X-ray diffractmeter, scanning electron microscope, ultraviolet-visible light spectrometer and Raman spectrometer. The photoelectric conversion efficiency of the DSSCs was used the prepared (P/Si)-TiO2 thick films as photoanode measured by a solar simulator. The results showed that increasing the thickness of (P,Si)-TiO2 thick film did not change the crystal structure(anatase structure) and crystillite sizes(20 m) of anatase TiO2 and the morphology of the film. The film were formed by stacking the secondary particles of TiO2 with different sizes. The voids existed in the film. Visible light transmittance decreased with the thickness of (P,Si)-TiO2 thick films. The film thickness, dye loading and photoelectric conversion efficiency were also increased with the thickness of (P,Si)-TiO2 thick films. When the (P,Si)-TiO2 thick films used for DSSCs at 24 m thickness, can give The photoelectric conversion efficiency for the DSSC used the (P,Si)-TiO2 photoanode of 24 m thickness was 6.52%, with Voc= 0.74V and Jsc= 18.09 mA / cm2.