- 學位論文
基於X光吸收光譜對電致變色WO3/Ta2O5薄膜記憶和輻射效應之研究
Research on memory and radiation effects of electrochromic WO3/Ta2O5 thin films based on X-ray absorption spectroscopy
摘要
本研究探討了三氧化鎢（WO3）和五氧化二鉭（Ta2O5）電致變色薄膜的記憶效應及其在質子照射後電子結構和薄膜性能的影響。本實驗使用溶膠凝膠法製備WO3和Ta2O5單層及雙層薄膜，並通過多種儀器進行分析。實驗中，掃描式電子顯微鏡（SEM）用於觀察薄膜形貌；X光繞射（XRD）用於分析薄膜的晶體結構；拉曼光譜和X光吸收光譜（XAS）用於研究薄膜的電子結構。電化學性能測試包括循環伏安法（CV）和紫外/可見光光譜，用於評估薄膜的電化學特性和光學穿透率變化以及充放電性能測試。結果顯示，添加Ta2O5會使WO3薄膜晶體結構更穩定，並顯著提升了薄膜的記憶效應。質子照射後，薄膜的內部應力和缺陷增加，影響了其電致變色性能。整體來說，通過添加Ta2O5，WO3薄膜的記憶效應和電化學性能得到了明顯改善，這對於開發高性能的電致變色材料具有重要意義。
並列摘要
This study investigates the memory effect of tungsten trioxide (WO3) and tantalum pentoxide (Ta2O5) electrochromic films and the impact of proton irradiation on their electronic structure and performance. WO3 and Ta2O5 single-layer and double-layer films were prepared by the sol-gel method and analyzed by various instruments. Scanning electron microscopy (SEM) were used to observe the morphology of the films. X-ray diffraction (XRD) was used to analyze the crystal structure of the films, while Raman spectroscopy and X-ray absorption spectroscopy (XAS) were employed to study the electronic structure of the films. Electrochemical performance tests included cyclic voltammetry (CV) and UV/Vis spectroscopy to evaluate the electrochemical characteristics and optical transmittance variations of the films. The results showed that the addition of the Ta2O5 layer made the crystalline structure of WO3 films more stable and significantly enhanced their memory effect. After proton irradiation, the internal stress and defects of the films increased, affecting their electrochromic performance. Overall, the addition of Ta2O5 significantly improved the memory effect and electrochemical performance of WO3 films, which is important for the development of high-performance electrochromic materials.