- 學位論文
Langmuir-Blodgett 法製備二氧化鋯薄膜之探討
The Preparation of Zirconia Thin Film by Langmuir-Blodgett Method
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摘要
本研究以Langmuir-Blodgett (LB)法來製備氧化鋯薄膜，嘗試使用 2.4－Heneicosadiynoic Acid界面活性劑與四丁氧基鋯混合液在subphase(水)上形成分子層（Langmuir film），再將薄膜從水面轉置到固體的基材上，以獲得氧化鋯LB膜。 π-A等溫線分析發現界面活性劑Langmuir膜的π-A等溫線不受添加量的影響，並有明顯的L-G state，而加入四丁氧基鋯Langmuir膜的π-A等溫線就受添加量的影響。己烷溶劑的揮發率高且不會溶於subphase故不會影響表面膜特性，但丁醇溶劑分子則會殘存於水相對實驗造成影響。由硝酸釔Langmuir膜的π-A等溫線推測硝酸釔不會產生反應，而且會溶於水相，因此會與單純只有界面活性劑的π-A等溫線不同。觀察沉積轉換率，發現當基材向下時，τ值偏低；基材向上時τ值較大，顯示累積LB膜可能是Z型排列。 以AFM觀察氧化鋯LB膜，當沈積時的表面壓力愈大，表面被擠壓的情況愈顯著，排列愈緊密，而表面形貌也會受基材與沉積層數所影響，但基材的因素又更顯著。SEM觀察到LB膜的表面有部分的破裂，EDX分析觀察到在低表面壓力下沉積膜得到的鋯分子含量稀少，而高表面壓力則鋯含量較多有微弱的訊號峰出現。
並列摘要
The mixture of surfactant (2,4-Heneicosadiynoic) and Zirconium (IV) butoxide was spread on the air/water interface to form the Langmuir film. Then the film was transferred onto a suitable substrate using LB technique. The π-A isotherm of the surfactant solution was not influenced by it’s dosage and a clear L-G transition state was observed. However, the dosage of the surfactant and Zirconium (IV) butoxide mixture showed an strong influence on it’s π-A isotherm . The solvent hexane cause insignificant effect on the Langmuir film, but the other solvent butanol seems to enhance the surfactant solubility. The π-A isotherm of Yttrium (Ⅲ) nitrate surfactant mixture was also studied. The π-A isotherm of Yttrium (Ⅲ) nitrate was different from that of the Zirconium (IV) butoxide. Yttrium (Ⅲ) nitrate seems to change the solubility and molecular dignment of the surfactant. The LB transfer ratio (τ) was found lower when the substrate moved down ward, while it is higher as the substrate moved up ward. This suggests the LB film is “Z” type. The morphology of the LB film was studied by AFM with increasing surface pressure, the LB film became denser pact with regular shape grains. The morphology was also found to change by the type of substrate and the number of dipping layer. SEM analysis showed that the LB film does not have a long-range homogeneity: crack was observed.
參考文獻
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