MMA-TBMA-MAA共聚物單體組成與分子量對微影製程的影響

Effects of composition and molecular weight of the MMA-TBMA-MAA copolymers on the process of microlithography

徐明志(Ming Chih Hsu)

指導教授 ： 王紀

元智大學/工程學院/化學工程與材料科學學系/碩士(1997年)

摘要

MMA-TBMA-MAA共聚物單體組成與分子量
對微影製程的影響

學生：徐明志 指導教授：王 紀博士

私立元智大學化學工程研究所

摘要
本研究藉著自由基聚合來合成不同單體重量比及不同起始劑AIBN濃度
的三元聚合物-poly(MMA-TBMA-MAA)，目標為合成不同組成及分子量分佈的
共聚物，並以有機合成反應來製備光酸發生劑-Ph3S+AsF6-，其後將此光
酸與合成之共聚物配製成所需之光阻劑。其中MMA(甲基丙烯酸甲酯)提供
了極佳的機械性質及正型光阻的顯影特性，TBMA(甲基丙烯酸第三丁酯)提
供了對酸不安定的側鏈基團，MAA(甲基丙烯酸)則提供了對鹼性顯影液的
顯影能力及良好的附著力[1]。

在材料鑑定上，以元素分析(EA)及IR光譜鑑定合成之產物；在物性分析
分析上，由DSC量測共聚物的玻璃轉移溫度，由TGA熱裂解實驗可得到熱
穩定及去保護反應的相關溫度，並以GPC來量測共聚物的分子量；在微影
製程上，以旋轉塗佈製成光阻薄膜，再利用248nm KrF準分子雷射曝光、
後烘烤、顯影，所得到的光阻圖案以掃瞄式電子顯微鏡與原子力顯微鏡
觀察。

(關鍵詞：三元聚合物,光酸,去保護反應,微影)

關鍵字

三元聚合物 ； 光酸 ； 微影

並列摘要

Effects of composition and molecular weight of the MMA-TBMA-MAA
copolymers on the process of microlithography

Student : Ming Chih Hsu Advisors : Dr. Chi Wang

Institute of Chemical Engineering
Yuan-Ze University

ABSTRACT

A preliminary study on the DUV photoresists(PR) used for
the 248nm KrF lithography was carried out. The PR consists of a
terpolymer, poly(MMA-TBMA-MAA), and a photoacid generator,
Ph3S+AsF6-, which are prepared in this laboratory.
In the terpolymer system, each monomer serves separate
function. Methyl methacrylate(MMA) promotes mechanical
properties and positive tone development characteristics,
T-butyl methacrylate(TBMA) provides an acid cleavable side
group, and methacrylic acid(MAA) controls aqueous development
kinetics, and also improves adhesion[1].
Characterization of the PR was conducted using DSC, TGA, EA,
IR , UV, and GPC to reveal the processing-related properties.
Moreover, the resist patterns were investigated using SEM and
AFM.
(Keywords: terpolymer, photoacid, lithography)

並列關鍵字

terpolymer ； photoacid ； lithography

參考文獻

1. R. D. Allen, G. M. Wallraff, W. D. Hinsberg and L. L. Simpson, "A chemically amplified photoresists for visible laser direct imaging", J. Vac. Sci. Technol., B9, 3357 (1991).

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5. K. Nakano, K. Maeda, S. Iwasa, J. Yano, Y. Ogura, and E. Hasegawa, "Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist", SPIE, 2195, 194 (1994).

6. R. D. Allen, G. M. Wallraff, R. A. DiPietro, D. C. Hofer, and R. R. Kunz, ?nm single layer rseists building etch resistance into a high resolution imaging system", SPIE, 2438, 474 (1995).

8. A. A. Lamola, C. R. Szmanda, and J. W. Thackeray, "Chemically amplified resists", Solid State Technology, 34, 53 (1991).