- 學位論文
TFT製程中抑制Hillock之研究
A STUDY OF SUPPRESSING HILLOCK FORMATION IN THIN FILM TRANSISTOR PROCESS
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摘要
在主動矩陣液晶顯示器中，純鋁和鋁合金是非常重要的導電材料。在閘極金屬層上尋找低電阻率和具有熱穩定性，並能夠抑制小山丘突出(Hillock)的材料為一主要研究題目。本研究使用純鋁和鋁鎳鑭靶材(Aluminum Nickel Lanthanum)搭配覆蓋鉬(molybdenum)金屬，利用直流磁控式物理濺鍍裝置形成薄膜，並利用殘氣分析儀(RGA)監控真空室的殘氣狀況。Hillock的發生會受到靶材材料、薄膜厚度、退火溫度及成膜速率的影響。同時對真空室內N2殘留量也是重要的因素之一。研究結果使用鋁鎳鑭的靶材在N2殘氣值為2×10-4Pa時成膜時不會產生Hillock。膜厚超過3000Å以上時，鉬覆蓋鋁鎳鑭合金在抑制Hillock方面更優於純鋁，且有接近純鋁的電阻率。鋁鎳鑭合金能夠提高生產良率並能實際用在TFT面板廠大量生產。
並列摘要
Al and Al alloy are very important conducting materials for Active-matrix liquid crystal display (AMLCD).To find a low resistivity and the high thermal stability which can suppress hillocks formation material in gate metal line. The pure Al and AlNiLa (Aluminum Nickel Lanthanum) were covered with Mo (molybdenum) and by dc magnet scan sputtering formed the thin film. The RGA (residual gas analysis) leak detector was monitored the chamber. The Hillock formation was affected by target material, film thickness, anneal temperature and the deposition rate. The residual gas N2 was also an important factor for production. The AlNiLa thin film was not easy to find hillock while N2 residual gas of chamber at 2×10-4Pa. The AlNiLa is better than pure Al to suppress the hillock while thin film thickness over 3000Å and the resistivity was close to the pure Aluminum after annealing. It can improve the yield and can use in TFT LCD factory for mass production.
參考文獻
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