- 學位論文
單層二硫化鉬在高取向熱解石墨基體上的電壓依賴性研究
Voltage dependent study of molybdenum disulfide monolayer on highly oriented pyrolytic graphite substrate
摘要
自發現以來，二硫化鉬（MoS2）已成為一種非凡的 2D 分層材料。除了作為石墨烯的合適替代品之外， MoS2 還具有廣泛的新物理和化學特性，例如 2D 層之間的弱范德華力（產生低摩擦係數） [18]，電導率為 10-4 Ω-1 cm-1 [6] 隨著光子學和光伏質量的提高，它成為化學反應的催化劑。此外，這種獨特的化 合物在插入其他元素時具有良好的可調特性。對我們的行業有很多重要影響 的應用，例如氫沉澱反應（HER），可以從 MoS2 的性能大幅提升中受益。但是，當期望將元素插入其中時，必須完全調查 MoS2 的內在缺陷。在這裡，我們提出了一個詳細的缺陷研究，以及 MoS2對高定向熱解石墨（HOPG）基板的電壓依賴性，涉及掃描隧道顯微鏡（STM）特性。
並列摘要
Molybdenum disulfide (MoS2) has emerged as an extraordinary 2D layered material since its discovery. In addition to its potential to be a suitable replacement for graphene, MoS2 possesses a wide range of novel physical as well as chemical properties such as a weak Van der Waals force between 2D layers of atoms (leading to low coefficient of friction) [18], an electrical conductivity of 10-4Ω-1cm-1 [6], owning an improved photonics and photovoltaics quality, being a catalyst for chemical reactions, etc.. Furthermore, this distinctive compound displays fabulous tunable properties when being intercalated with other elements. Several strongly impacting applications for our industries, e.g. hydrogen evolution reaction (HER), benefit from such a huge enhancement in performance of MoS2. Hence, comprehensive investigations of intrinsic defects of MoS2 must be performed in anticipation of intercalating elements into it. However, while investigating these defects, a strong voltage dependent characteristic of MoS2 monolayer is observed. Here, we present a detailed voltage dependent study of MoS2 monolayer on highly oriented pyrolyticgraphite (HOPG) substrate involving scanning tunneling microscope (STM).