- 學位論文
非晶相銦鎵鋅氧化物薄膜應用於非揮發性記憶體的電性研究
Study of Amorphous InGaZnO Thin Film Electrical Characteristics for Nonvolatile Memory Applications
若您是本文的作者，可授權文章由華藝線上圖書館中協助推廣。
摘要
非晶相氧化物半導體(Amorphous Oxide Semiconductors: AOSs)由於具有可低溫沉積、可撓曲、透明性以及均勻度佳等特點，受到廣泛的重視。目前被研究的氧化物半導體有ITO、IZO、TiO2、ZnO、In2O3、Ga2O3、IGO、a-IGZO等。其中以非晶相銦鎵鋅氧化物(Amorphous InGaZnO: a-IGZO)薄膜當作主動層(Active layer)的薄膜電晶體(Thin Film Transistors: TFTs)，載子遷移率與可靠度比傳統氫化非晶矽薄膜電晶體(a-Si:H TFT)高、均勻性優於低溫複晶矽薄膜電晶體(Low Temperature Polycrystalline Silicon TFT: LTPS TFT) 且可低溫製程，因此a-IGZO薄膜電晶體具有取代氫化非晶矽薄膜電晶體與低溫複晶矽薄膜電晶體來製作主動矩陣有機發光顯示器(Active Matrix Organic Light Emitting Display: AMOLED)的潛力。由於a-IGZO材料的載子濃度可經由製程條件以及後續處理來控制，使a-IGZO材料形成導體、半導體或絕緣體特性，因此a-IGZO薄膜其另一項具革命的技術發展為幫助系統面板(System on Panel: SOP)的實現；即是將所有的周邊電路，關鍵元件，記憶體元件，驅動電路等，全部整合於玻璃基板上。其中非揮發性記憶體元件(Nonvolatile Memory: NVM)是實現系統面板的關鍵零組件之一。因此本論文以a-IGZO薄膜為電荷儲存層(Charge Storage Layer)的非揮發性記憶體，製作出鋁/氧化矽/a-IGZO/氧化矽/矽(MOIOS)的記憶體結構。研究a-IGZO非揮發性記憶體在未退火處理、300℃退火處理以及NH3電漿處理下，對資料寫入(Program)、抹除(Erase)、耐操度(Endurance)與資料保存特性(Retention)的影響。實驗結果指出， 以a-IGZO薄膜為電荷儲存層的非揮發性記憶體具有好的記憶體特性。而高溫使a-IGZO薄膜由絕緣體特性轉變成導體特性，導致a-IGZO非揮發性記憶體在300℃退火處理或NH3電漿處理下具有較差的記憶體特性。
並列摘要
Amorphous oxide semiconductors (AOSs) are attracted much attention due to low temperature deposition, flexible, transmission, and uniformity. It has been investigated of AOSs, such as ITO, IZO, TiO2, ZnO, In2O3, Ga2O3, IGO, a-IGZO, etc. Especially, the thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher mobility and better reliability than conventional hydrogenated amorphous silicon TFT (a-Si: H TFT). However, the uniformity of a-IGZO TFT is superior to Low Temperature Polycrystalline Silicon TFT (LTPS TFT). In addition, the a-IGZO thin film can fabricate at low temperature. Therefore, the a-IGZO TFTs have the potential to replace a-Si: H TFT and LTPS TFT forming Active Matrix Organic Light Emitting Display (AMOLED). Because we can control the carrier concentration of a-IGZO thin film by different process conditions and post treatments, it can form one of three types such as conductor, semiconductor, and insulator. Another breakthrough technology of a-IGZO TFT is to achieve system on panel (SOP). This means that periphery circuits, key devices, driving circuits and memory all integrated on glass substrate. The system nonvolatile memory (NVM) is the key component to realize the system on panel. The thesis studies that NVM employing a-IGZO as charge trapping layer to fabricate the structure forming Al/Oxide/a-IGZO/Oxide/Si (MOIOS). Investigate the effect of memory properties such as program, erase, endurance, and data retention at not annealing, 300oC annealing, or NH3 plasma treatment. The result shows that NVM with a-IGZO as charge trapping layer has good memory property. However, the a-IGZO thin film transfers from conductor characteristic to insulator characteristic result in worse memory property at 300oC annealing or NH3 plasma treatment.
參考文獻
Chapter 1
[1.1] K. Jain, M. Klosner, M. Zemel, S. Raghunandan, “Flexible Electronics and Displays: High-Resolution, Roll-to-Roll, Projection Lithography and Photoablation Processing Technologies for High-Throughput Production,” Proceedings of The IEEE, vol. 93, pp. 1500-1510, 2005.
[1.2] H. N. Lee, J. Kyung. M. C. Sung, et al., “Oxide TFT with multilayer gate insulator for backplane of AMOLED device,” Journal of the SID, 16/2, 2008.
[1.3] M. Ito, M. Kon, C. Miyazaki, et al. “Amorphous oxide TFT and their applications in electrophoretic displays,” Phys. Stat. Sol. (a), 205, No. 8, pp. 1885–1894, 2008.
[1.4] H. Hosono, “Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application,” Journal of Non-Crystalline Solids, 352, pp. 851-858, 2006.