摘要
矽基之光學元件利用光子取代電子作為傳遞資訊之載子的嶄新概念，被認為能夠全盤性的改善IC工業上由於元件尺寸縮減所面臨的瓶頸，因而廣為受到大眾所矚目，也為光子時代開創了一條先驅的路。最近，一些研究團隊利用拉曼散射的原理，成功的製造出第一具全矽基材的拉曼雷射，也為我們建立起了先導的工作。為了改善前人的缺點並近一步改善元件之性能，因此，我們利用一維奈米材料的獨特性質來建構矽奈米線之光學元件。本論文中介紹了不同的矽奈米線成長機制，並成功地經由不同的製程方法合成矽奈米線以期獲得最佳型態之矽奈米線，同時研究不同實驗參數之影響。此外，我們亦量測了奈米線獨特的物理和光學性質在不同製程狀況下和奈米線的形狀、直徑、結晶指向的相關性。結果來說，我們成功的証實一維的矽奈米線確實能夠改進矽塊材之發光性質，並經由適當的製程條件來達成較佳的控制能力。在未來的研究中，我們期望可以利用一維奈米線的特殊性質，實現矽奈米線的雷射效應，更進一步創造多功能之主動光學元件，甚至建構起矽奈米線為主的單晶片之光子光路。
並列摘要
Silicon-based optical devices have been attracting people’s eyes recently because it can totally revolutionize the bottleneck in today’s IC fabrication industry due to diminishing dimension of component by using photons instead of electrons as data carrier and create a pioneering avenue toward photonic generation. Latterly, some investigating groups successfully demonstrated the first all-silicon laser based on Raman scattering and exhibited as a forerunner for us. In behalf of breaking through several drawbacks as well as ameliorating the performance compared with the previous work, we utilize specific qualities of one-dimensional nanomaterials as backbone to construct silicon nanowires-based optical devices. Therefore, in this thesis we introduce several different growth mechanisms of nanowires and successful synthesize silicon nanowires via diverse fabrication processes in order to optimize the morphology of samples, meanwhile, investigate influence from different experimental parameters. Besides, we further examine unique physical and optical characteristics of silicon nanowires dependent on shape, diameter or orientation occurred from variation of different fabrication processes. In conclusion, we prove that one dimension silicon nanowires indeed promote poor light emission in bulk silicon and achieve better controllability though adequate fabrication process. In the future, we will expect to actualize the lasing effect and further carry out active multifarious optical devices, even realizing a silicon nanowires based optical circuit within one single chip.
參考文獻
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