- 學位論文
應用於鰭式電晶體邏輯製程之新型鰭內隔絕一次性寫入記憶體
A New Intra-Fin-Cell-Isolation One-Time Programmable Memory in FinFET CMOS Technology
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摘要
隨著消費性電子產品的爆發性成長，快速且大量的資料存取需求增加，邏輯製程相容之一次性寫入記憶體具有體積小、穩定性高的特點，被大量地使用在行動裝置上，作為程式碼儲存、參數設定、備援系統及電路校調等方面的非揮發性儲存應用。 本論文提出一種相容於先進鰭式電晶體邏輯製程的鰭內隔絕一次性寫入記憶體(IFCI OTP Memory)，不用額外的光罩或特殊的製程步驟，可以取代利用STI隔絕記憶元的方式，進一步縮小記憶單元面積。IFCI OTP利用閘極介電層硬崩潰作為寫入機制，能夠在低電壓操作下進行快速的寫入，即便考慮記憶元之間的特性差異，依然可以得到超過一百萬倍的讀取電流比。此記憶體利用鰭內隔絕的方式可以成功隔開相鄰記憶元，達到獨立操作，且沒有讀取及寫入干擾的問題，在長時間150oC的高溫烘烤測試中也顯現出很好的資料保存能力。 IFCI OTP 擁有寫入速度快、功耗低、元件面積小、可靠度高等優點，再加上無需增加光罩或製程步驟，使其能夠隨著製程微縮而持續保持競爭優勢，成為極具發展潛力的一次性寫入記憶體。
並列摘要
With the explosive growth of consumer electronics, Non-Volatile storage requirement increases drastically in variable applications. High-density CMOS logic compatible One-Time Programmable (OTP) memories have been widely used in portable devices for code storage, parameter setting, redundancy implementation and circuit trimming. A novel One-Time Programmable (OTP) memory cell with Intra-Fin-Cell-Isolation (IFCI) structure on FinFET CMOS process is proposed and demonstrated. The IFCI OTP utilizes gate dielectric breakdown as program mechanism and uses the concept of Intra-Fin-Cell-Isolation to separate neighboring cells for individual operation without introducing extra masks or process steps than standard CMOS logic processes. The new OTP can be operated at low program voltage with fast program speed. More than 6 orders of On/Off read window is obtained in cell statistical characterization. Moreover, the IFCI OTP shows no disturb concerns and excellent data retention as well. With fast program speed, low power consumption, small cell size as well as superior reliability, the IFCI OTP shows great potential in advanced logic OTP applications.
參考文獻
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