- 學位論文
CMOS-MEMS製程於運動感測器之開發與整合
Design, Implementation and Integration of CMOS-MEMS Motion Sensors
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摘要
本研究利用標準CMOS製程搭配各種後製程來設計製造感測器整合晶片，以加速度計與共振式磁力計作為研究主軸，最後透過CMOS製程來實現與整合六軸運動感測器於單一晶片上。由於元件的設計受限於CMOS-MEMS製程，例如在厚度上之限制，殘餘應力所導致面積尺寸受限等等之限制，因此本研究提出三種提升靈敏度的方法來克服製程限制。在加速度計部分，利用CMOS的鋁膜層成長陽極氧化鋁於感測電極上提升加速度計之靈敏度。以及利用CMOS標準製程中二氧化矽材料作為加速度計質量塊主要結構，將複合膜層堆疊所構成的設計改為僅由單一材料，來降低因熱膨脹係數不同之複合膜層所產生的形變量。本文也提出結合抓取與放置技術放置體積塊增加質量於傾斜計應用。在磁力計部分，利用CMOS多層金屬走線之優勢，設計兩組正交擺放同平面線圈整合於單一感測單元上構成三軸磁力計。本文最後也透過三個應用樞紐整合來展示CMOS-MEMS感測器之開發與整合於單一晶片上。本研究所提出之慣性感測樞紐部份則包括加速度計與磁力計，將MEMS慣性感測器相結合，可以提供更好的精度和分辨率，並且可以有更多應用。環境感測樞紐則包含溼度感測器、溫度感測器。聲學感測樞紐包括了麥克風、麥克風陣列。未來可針對不同應用的需求製作出各種不同的感測器樞紐於CMOS-MEMS製程上實現。
並列摘要
In this study, a sensor integration chip is designed and implemented based on the standard TSMC 0.35 μm 2-polysilicon 4-Metal (2P4M) process. This study implements and further monolithic integrates the tri-axis accelerometer, tri-axis magnetic sensor, pressure sensor, humidity sensor, and temperature sensor on a single chip. Moreover, various designs and post-CMOS process technologies have been developed to enhance the performances of the sensors. First, the growing of nanoporous anodic aluminum oxide (np-AAO) thin layer on sensing electrodes has been demonstrated. Second, the stacking of pure oxide layers as the mechanical structures has been realized. The initial and thermal deformations of suspended MEMS structure respectively due to the thin film residual stresses and thermal expansion coefficient (CTE) mismatch are reduced. Third, the low temperature pick-place and UV-curing process has been developed to integrate a bulk block on a suspended CMOS MEMS structure. Fourth, the CMOS-MEMS structure with the embedded in-plane magnetic coils is designed implemented using the metal layers and tungsten vias. The coils act as a solenoid to generate in-plane magnetic field. Finally, the concepts to exploit these available CMOS MEMS sensors to establish the motion hub and environment hub have also been demonstrated.
參考文獻
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