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  • 學位論文

運用於高速傳輸介面之單迴路資料時脈還原及電流耦合轉換串化及解串化器

Single-Loop Clock Data Recovery and Transformer-Coupled Current SerDes for High Speed Transmission Interface

指導教授 : 吳仁銘

摘要


本研究主要提出一個串化-解串化器(SerDes)以及資料時脈還原電路(CDR)來達成高速的資料處理在有線通訊系統之應用。 所設計的二對一多功器與一對二多功器為處理最高40 Gb/s資料傳輸速度。相較於傳統的電流型邏輯電路(CML),變壓器耦合電流(TCC)的電路被設計成更高的源級電流(Drain Currnet)和更低的供應電壓(Supply Voltage)。這兩顆晶片以65nm CMOS製程製作出,消耗低於一百毫瓦(<100 mW)並且操作在0.8伏特的提供電壓。經過串化及解串化的40 Gb/s的 2^7–1虛擬隨機二進位序列資料驗證了串化與解串化界面的功能。 所設計的線性資料時脈還原電路(CDR)操作在全速式2.56/3.2Gb/s資料。延展式相位偵測器(EPD)用來取代傳統Hogge的相位偵測器。資料時脈還原電路在0.18-μm CMOS製程實作出和0.8×1.0 mm^2晶片面積。這個晶片展現出一個方均根2.12 ps低抖動的還原時脈和在 231 – 1虛擬隨機二進位序列的3.5 × 10^-9錯誤更正率。在提供電壓1.8伏特下消耗136 mW。   所設計的二進位資料時脈還原電路(CDR)操作在全速式10Gb/s資料。所提出的旋轉式相位頻率偵測器(RPFD)用在無參考時脈的資料還原電路。單一迴路之資料時脈還原電路以90nm CMOS製程製作出0.71-mm^2晶片尺寸。在10-Gb/s的2^31–1虛擬隨機二進位序列下,資料時脈還原電路追蹤1.48 GHz捕捉範圍之自由時脈訊號並且鎖定於20 μs的追蹤時間。同時間,還原時脈訊號和還原資料訊號的峰對峰值抖動分別展現出5 ps和15.11 ps。在提供電壓1.0伏特下量測的晶片消耗了92 mW。

並列摘要


The thesis proposes a serializer-and-deserializer (SerDes) with a clock and data recovery (CDR) to achieve high speed data processing for the wire-line communication system. The proposed 2:1 MUX and 1:2 DEMUX design deals with the maximum 40 Gb/s data transmission rate. A transformer-coupled current (TCC) schematics is designed to more drain current and less supply voltage than the current-mode-logic (CML). The two chips are implemented in 65 nm standard CMOS technology and consume sub-hundred milliwatt operation power at the supply voltage of 0.8-V. The measured serialized-and-deserialized 40-Gb/s PRBS of 2^7–1 verify the function of SerDes interface. The proposed linear-type CDR design operates at full-rate data of 2.56/3.2Gb/s. An Ex-tended Phase Detector (EPD) circuit is proposed to replace the Hogge`s PD. The CDR circuit is fabricated in a 0.18μm 1P6M CMOS process in an area of 0.8×1.0 mm^2. This CDR chip exhibits a low jitter performance of 2.12 ps RMS in the recovered clock and a BER is 3.5 × 10^-9 with PRBS of 2^31–1 sequence. The power consumption is 136mW with a 1.8V supply. The proposed binary-type CDR design operates at full-rate 10 Gb/s data. A rotational phase frequency detector (RPFD) is proposed to realize reference-less CDR. The single-loop CDR is fabricated in TSMC mixed-signal 1P9M 90-nm standard CMOS process with overall die size of 0.71-mm^2. With input 10-Gb/s data of a 2^31–1 PRBS, the CDR tracks free running clock over the capture range of 1.48 GHz and locks in the acquisition time of 20 μs. At the same time, the peak-to-peak jitter shows only 5.0 ps in the recovered clock and exhibits 15.11 ps in the recovered data. The measured chip consumes 92 mW with 1.0-V supply voltage.

參考文獻


[1] Y.-H. Hsu, M.-S. Kao, H.-C. Tzeng, C.-T. Chiu, J.-M. Wu, and S.-H. Hsu, “A 20 Gbps Scalable Load Balanced Birkhoff-von Neumann Symmetric TDM Switch IC with SERDES Interfaces,” in IEEE Design Automation Conf., 2007, pp. 102–103.
[2] M.-S. Lin, C.-C. Tsai, and et al., “A 5Gb/s low-power PCI express/USB3.0 ready PHY in 40nm CMOS technology with high-jitter immunity,” in IEEE Asian Solid-State Circuits Conf., Nov. 16-18 2009, pp. 177–180.
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[5] N. Suzuki, K. Nakura, S. Kozaki, H. Tagami, M. Nogami, and J. Nakagawa, “Single Platform 10G-EPON 10.3-Gbps/1.25-Gbps Dual-Rate CDR with Fast Burst-Mode Lock Time Employing 82.5 GS/s Sampling IC and Bit-Rate Adaptive Decision Logic Circuit,”in IEEE ECOC, 2010.

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