碲化錳鎘磊晶層與碲化鎘/碲化錳鎘多重量子井的分子束磊晶與物性研究

Molecular Beam Epitaxy and Physical Properties of Cd1-xMnxTe Epilayers and CdTe/Cd1-xMnxTe Multiple Quantum Wells

顏瑞原(Jui-Yuan Yen.)

指導教授 ： 邱寬城 ； 周武清

中原大學/理學院/應用物理研究所/碩士(2004年)

https://doi.org/10.6840/cycu200400080

摘要

以分子束磊晶法在砷化鎵(001)基板上成長碲化錳鎘磊晶層，並以反射光譜、穿透光譜以及光激螢光譜來探討磊晶層的光學特性。由變溫光激螢光譜繪出光激螢光強度積分對溫度的關係圖，且由計算得知激子的活化能會隨著錳濃度的增加而逐漸變大。再利用瓦希尼 (Varshni) 與歐德尼爾 (O'Donnell) 經驗公式對變溫光激螢光譜的近能隙位置做擬合。另外也利用散射模型對變溫光激螢光訊號的半強度半寬做擬合。
除了碲化錳鎘磊晶層外，我們也利用分子束磊晶法在砷化鎵(001)基板上成長碲化鎘/碲化錳鎘(CdTe/Cd1-xMnxTe)多重量子井結構，且利用光激螢光譜量測光學特性。並由變溫光激螢光譜的積分強度求得碲化鎘/碲化錳鎘多重量子井結構的激子活化能隨井寬增加而變大。而以縱向光學聲子、雜質及聲學聲子等作用參數作為隨著溫度改變之光激螢光譜線寬之理論模擬分析得到雜質束縛能量。

關鍵字

磊晶層 ； 碲化鎘 ； 多重量子井 ； 碲化錳鎘 ； 分子束磊晶 ； X射線 ； 光激螢光 ； 反射 ； 穿透

並列摘要

Cd1-xMnxTe epilayers were grown on the GaAs(001) substrates by the molecular beam epitaxy. The optical properties of the epilayers were studied by the reflectance (R), transmission (T) and photoluminescence (PL) measurements. The exciton activation energy, which is determined from the integrated PL intensity versus temperature plot, shows an increase with the Mn concentration. Temperature dependence of the energy gap, measured by the PL spectra, was fitted by the Varshni's and the O'Donnell's relation. The temperature dependence of PL line-width broadening was analyzed by a simple scattering model.
In addition to the study of Cd1-xMnxTe epilayers, the CdTe/Cd0.767Mn0.233Te multiple quantum wells ( MQWs ) were also grown on the GaAs (001) substrate by molecular beam epitaxy. Optical properties were studied by PL spectra. The PL line-width broadening with temperature was also fitted. Activation energy, impurity binding energy, , and exciton longitudinal optical ( LO ) phonon coupling was also found to decrease with the well thickness.

並列關鍵字

Multiple quantum wells ； Transmission ； Reflectivity ； Photoluminescence ； R ； MQWs ； PL ； T ； Molecular beam epitaxial ； CdTe ； Cd1-xMnxTe ； epilayer ； MBE ； X-ray

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