- 學位論文
應用s域右半平面極點製作振盪器
Application of the S-domain Right-Half-Plane Poles to Construct Oscillators
並列摘要
Parasitic capacitances in the electronic circuits are often observable, but are difficult to remove it. On the process of making high-frequency oscillators, parasitic capacitances as one of the major factors have to be put into consideration. Parasitic capacitances scattered in oscillator circuits may cause the loop gains of the oscillators at a value smaller than 1, unable to oscillate. In this study, we give a proposal that since parasitic capacitances always exist in the oscillator circuit, if the structure of the oscillator circuit would change, the impact of parasitic capacitances may be therefore compensated. Consequently, the oscillator, even under the influence of parasitic capacitances, can still oscillate in a smooth way. In this study, the feature of the proposed oscillator distinct from other oscillators is that the circuit has poles located at the second-order transfer function in the right half s-plane. The second-order transfer function can make compensation for the impact of the parasitic capacitances in the circuit, enabling the oscillator to oscillate smoothly.