- 學位論文
正型鍺基板之銀歐姆接觸特性研究
Study on Omhic Contact of Silver Material to P-type Ge Substrate
摘要
在本論文中，我們使用了傳輸線模型法(TLM)研究在P型鍺之上使用銀鎵合金結構形成歐姆接觸的可能性，為了得到最低的特徵阻值，尋求最合適的Ga還有最佳的回火溫度和時間，實驗的結果指出當增加銀鎵合金裡鎵的含量到達25％得到較低的特徵阻值，其特徵阻值會降到最低( ρc~1.00×10-4Ω-cm2 )，回火溫度為325℃而回火時間為1分鐘。此外我們將此條件來做變溫量測，量測溫度由70℃增加到120℃時，其特徵電阻隨著溫度上升而增加。 此外，將具有最低特徵阻值的歐姆接觸金屬組成結構(亦即Ag-Ga(25%)) 蒸鍍在三接面太陽能電池的正型電極，來探討Ag-Ga歐姆接觸金屬材料應用於元件上之後的元件特性，如同歐姆接觸金屬蒸鍍在正型鍺基板上的結果，太陽能電池的效率(Eff)、填充因子(FF)、短路電流(Isc)、開路電壓(Voc)皆在最佳歐姆接觸金屬組成的最佳條件下有最好的表現。
並列摘要
In this dissertation, the formation of Ag-Ga alloyed film is adopted by means of the transmission line model method (TLM) to study the feasibility of forming p-type ohmic contact to p-Ge material. We sought for the optimum of the Ga and the suitable annealing temperature and time for the lowest specific contact resistance ρc. Then, we found out that the optimum structure of the Ag and Ga and the suitable annealing temperature and time for the lowest specific contact resistance ρc. Experimental results indicate that when the content of gallium in the silver-gallium, up to 25%, respectively, the lowest value (ρc ~1×10-4 Ω-cm2) of specific contact resistance could be attained where the sample is annealed at 325℃ for one minute. In addition to the room temperature results, the variations of specific contact resistance at the elevated temperatures ranging from 70℃ to 120℃ are also detailed . Furthermore, the optimum ohmic contact structure Ag-Ga(25%) is selected as the p-type electrode for the InGaP / GaAs / Ge triple-junction (TJ) solar cells. Then, we measured the efficiency (Eff), fill factor (FF), open circuit voltage (Voc) and short circuit current (Isc) of solar cells are measured to obtain the optimum ohmic contact formation condition of Ag-Ga(25%) for the best solar cell performance.