- 學位論文
應用於28GHz 5G通訊的CMOS功率分配器、壓控震盪器及除四注入鎖定除頻器之研究
CMOS Power Divider, VCO and ILFD4 for 28 GHz 5G Communications
摘要
本論文使用台積電180奈米CMOS製程元件設計與實現壓控振盪器及功率分配器及使用台積電90奈米CMOS製程元件設計與實現除四注入鎖定除頻器以作為在K、Ka頻帶的5G無線通訊系統之應用。此論文的研究主題分成三部分：第一部分是一個以180奈米製程實現應用在28 GHz的四路功率分配器。基於傳統的威爾金森功率分器上，將隔離電路改為由電阻及電容所構成，具有面積更小的優點。S11在28 GHz時為–24 dB，S22 ～S55 為–13.1 ~–17.3 dB，隔離度為–27.7 dB。各個輸出埠損耗皆小於2.3 dB，輸出振幅不平衡皆小於0.44 dB，輸出相位差皆小於0.7°。第二部分是一個以180奈米製程實現應用在28 GHz的壓控振盪器。使用基極自我偏壓技術降低閾值電壓以達成低功率消耗的表現。此電路可調範圍為26 ~ 30 GHz，相位雜訊(@10MHz)為-116.5 ~ -112.3 dBc/Hz，功率消耗為12.3mW。第三部分是一個以90奈米製程實現應用在 28 GHz的除四注入鎖定除頻器。核心震盪電路使用四級串接之差動環形震盪器，並設計兩次注入鎖定除二已達到除四且具有八相位之效果。整體電路功耗34 mW、鎖定範圍為23.8~30.9 GHz、輸出功率為1.9 ~ 2.4dBm、相位雜訊(@10MHz)介於-129.4到-118.4 dBc/Hz之間。
並列摘要
The design and implement of power divider, voltage-controlled oscillator (VCO) and injection-locked frequency divider (ILFD) are purposed for K-band and Ka-band in this paper. The thesis can be divided into three parts：In the first part, a 28GHz 4-way power divider in 180 nm CMOS technology. At 28GHz, S11 is –24 dB, S22 ～S55 are –13.1 ~–17.3 dB. Insertion loss is less than 2.3 dB, output amplitude imbalance(AI) is less than 0.44 dB, output phase difference(PD) is less than 0.7° In the second part, the 28GHz VCO is implemented for 28 GHz applications in 180 nm CMOS technology. Core transistors used body self-bias technology to decrease its threshold voltage, this method can reduce the power. Tuning range is 26 ~ 30 GHz, and phase noise (@10MHz) is -116.5 ~ -112.3 dBc/Hz. The VCO consumes 12.3 mW .In the third part, a divided-by-4 injection-locked frequency divider is implemented for 28 GHz in 90 nm CMOS technology. The ILFD4 consumes 25 mW, locking range is 23.8~30.9 GHz, output power is 1.9~ 2.4 dBm, phase noise(@10MHz) is -129.4 ~ -118.4 dBc/Hz.