- 學位論文
使用CMOS影像感測器之細胞移動偵測平台
Detection Platform of Cell Migration using CMOS Image Sensor
摘要
本論文提出一個細胞移動偵測平台所需的感測器晶片設計，此晶片包含了CMOS影像感測器(CMOS Image Sensor,CIS)與逐漸趨近式類比至數位轉換器(SAR ADC)，直接將活體細胞擺放在影像感測晶片上，其移動的情況由晶片感測產生訊號，透過相關性二次取樣電路去除固定圖樣雜訊(Fixed-Pattern Noise,FPN)，再交由 SAR ADC 將類比訊號轉換成數位資訊以提供偵測平台顯示、儲存和分析。 為了能驗證此細胞移動偵測晶片，本論文採用國家晶片設計中心(CIC)所提供的TSMC 0.18μm 1P6M CMOS 製程進行晶片的設計與實現，CMOS影像感測器為8×8的陣列，填充係數(Fill Factor)約為 67.85%，功率消耗約為60.76μW，SAR ADC 操作電壓於1.8V，工作頻率為25MHz，輸入弦波頻率為52.897kHz 時，SNDR為51.46dB，ENOB為8.26-bit，功率消耗為 108.41μW，FOM 為169.77 fJ/conversion step。整體晶片面積(含 PAD)為 880μm × 880μm，功率消耗約為 169.17μW。
並列摘要
This thesis presents a cell migration sensor chip which contains CMOS image sensor array(CIS)and a successive approximation register(SAR)ADC. The migration activity of living cells placed directly on the surface of the image sensor chip is converted into electronic signal by the sensor chip. The fixed-pattern noise is removed through correlated double sampling circuit. The SAR ADC is then employed to convert the sensed signal into digital format for displaying, storage and analysis on the detection platform. To verify the cell migration sensor chip, a prototype chip with 8×8 image sensor array is implemented using TSMC 0.18μm 1P6M CMOS process provided by CIC. The CMOS image sensor has a fill factor of about 67.85% and consumes less than 60.76μW. The measurement results of the ADC show that the SNDR and ENOB are 51.46dB and 8.26-bit, respectively, at 2MS/s sampling rate and 52.897k Hz input frequency with power consumption of 108.41μW at 1.8V supply voltage. The FOM is 169.77 fJ/conversion. The whole chip area is 880μm×880μm,and the power consumption is less than 169.17μW.