退火對低射頻功率所沈積的氧化錫薄膜特性之影響

Influence of Annealing on The Properties of Tin Oxide Films Deposited at Low RF Power

范盛囿(Sheng-You Fan)

指導教授 ： 林素霞

國立暨南國際大學/科技學院/應用材料及光電工程學系/碩士(2015年)

https://doi.org/10.6837/NCNU.2015.00199

摘要

氧化錫通常以一氧化錫(SnO)及二氧化錫(SnO2)此兩種形式存在，而且鮮少有報導關於氧化錫的單一相之形成或擇優取向薄膜的成長。本研究是採用射頻磁控濺鍍法，以低射頻功率沉積SnO薄膜，然後再進行退火，改善SnO薄膜的性質。增加退火溫度，可使得氧化錫薄膜呈現正交晶SnO及正方晶SnO2共存。在較高的退火溫度或較低流量的氮氣中退火，可使得氧化錫薄膜呈現較低的表面粗糙度及較高的可見光穿透率。

關鍵字

氧化錫 ； 射頻磁控濺鍍 ； 退火 ； 可見光穿透率

並列摘要

Tin oxide exists in two forms of stannous oxide/tin monoxide (SnO) and stannic oxide/tin dioxide (SnO2). There are few reports on its formation of single phase and/or growth of epitaxial/oriented thin film. The SnO films are deposited at low RF power using RF magnetron sputtering in this study. Then, annealing is applied to improve the properties of SnO films. Increasing the annealing temperature results in the coexistence of orthorhombic SnO and tetragonal SnO2. At a higher annealing temperature or lower gas flow rate of nitrogen, the tin oxide films show lower surface roughness and higher visible transmission.

並列關鍵字

Tin oxide ； RF magnetron sputtering ； Annealing ； Visible transmission

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