毫米波之寬頻可變增益放大器與功率放大器設計

Design of Broadband Millimeter-Wave Variable Gain Amplifier and Power Amplifier

陳鈞霖(Chen Chun-Lin)

指導教授 ： 蔡政翰

國立臺灣師範大學/科技與工程學院/電機工程學系/碩士(2023年)

https://doi.org/10.6345/NTNU202301291

摘要

隨著全球進入5G通訊的時代，毫米波的研究和發展越來越重要。其中毫米波所擁有的優勢為高速傳輸速率、較寬的頻寬和較低的延遲，因此，毫米波的運用變成眾人的發展目標。本論文將分別使用90-nm互補式金屬氧化物半導體製程和65-nm互補式金屬氧化物半導體製程，來實現主頻為28 GHz的寬頻增益放大器與寬頻功率放大器。
第一個電路為28 GHz寬頻增益放大器，使用兩極皆為疊接組態增加整體的增益，同時使用第一級電流控制架構和基極偏壓技術，來達成較寬高的可變增益範圍，在可變增益範圍維持的前提下，使用共振腔及相位反轉技術達到低相位差。在這顆電路中，實現27 GHz～40 GHz的頻寬，增益皆大於16 dB，可變增益範圍皆可達到6.7，而相位差則低於5度。
第二個電路為28 GHz寬頻功率放大器，利用兩級串接的方法增加電路的增益，同時利用變壓器來當作匹配網路和功率結合的元件，第二級放大器採用F類來提高效率。當操作頻率為28GHz時，功率增益(Power gain)為25.588 dB，飽和輸出功率(Psat)為16.558 dBm，最大功率附加效率Peak PAE約為44.821 %，1-dB增益壓縮點之輸出功率(OP1dB)約為12.941 dBm，整體靜態電流約為15.64 mA，功率消耗為18.768 mW。

關鍵字

可變增益放大器 ； 電流控制架構 ； 基極偏壓 ； 功率放大器 ； F類放大器 ； 共振腔 ； 相位反轉 ； 變壓器 ； 二級串接

並列摘要

As the world enters the 5G communication, the research and development of millimeter-wave technologies have become increasingly important. A millimeter-wave band offers advantages such as high data-rate, wider bandwidth, and lower latency, making it a prominent focus of development. In this paper, we use 90-nm and 65-nm CMOS process to design two amplifiers centered at the frequency of 28-GHz, They are a broadband variable gain amplifier and broadband power amplifier.
The first circuit is a 28-GHz broadband variable gain amplifier. In this circuit, we designed with a cascode topology in both stages to increase gain. The current streeing is added in first satge and used body bias to achieve a wide variable gain range. Additionally, LC resonant and phase inversion are utilized to minimize phase variation while maintaining the variable gain range. The circuit achieve a bandwidth from 27-GHz to 40-GHz, with the gain of more than 16 dB, and a variable gain range greater than 6.7. Finally, the phase difference is below 5 degrees.
The second circuit is a 28-GHz broadband power amplifier. We designed with two-stage to increase the gain in this circuit. The transformer plays a role in matching network and power combining. The second-stage is class-F amplifier to improve efficiency. When operating at 28GHz, the power gain is 25.588 dB, the saturated output power is 16.558 dBm, the peak PAE is 44.821%, and the output power at 1-dB gain compression point is 12.941 dBm. The current is 15.64 mA, and the power consumption is 18.768 mW.

並列關鍵字

Variable Gain Amplifier ； Current Steering ； Body Bias ； Power Amplifier ； Class-F ； Complementary Metal Oxide Semiconductor ； LC resonant ； phase compensation ； transformer ； two-stage cascode

參考文獻

[1] C. W. Byeon, I. S. Song, S. J. Cho, H. Y. Kim, C. Lee and C. S. Park, "A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 μm SiGe BiCMOS Technology," 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Oct 2012.

[2] K. -Y. Kao, D. -R. Lu, J. -C. Kao and K. -Y. Lin, "A 60 GHz variable-gain low-noise amplifier with low phase variation," 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2016, pp. 1-3.

[3] Z. Jiang et al., "A 33.5–39 GHz 5-bit variable gain LNA with 4 dB NF and low phase shift," 2017 IEEE Asia Pacific Microwave Conference (APMC), Kuala Lumpar, 2017, pp. 1200-1202.

[4] P. Lo, C. Lin, H. Kuo and H. Chuang, "A Ka-band CMOS low-phase-variation variable gain amplifier with good matching capacity," 2012 9th European Radar Conference, Amsterdam, 2012, pp. 532-535.

[5] W. Li, Y. Chiang, J. Tsai, H. Yang, J. Cheng and T. Huang, "60-GHz 5-bit Phase Shifter With Integrated VGA Phase-Error Compensation," in IEEE Transactions on Microwave Theory and Techniques, vol. 61, no.3, pp.1224-1235, March 2013