680nm垂直共振腔面射型雷射(VCSEL)之研製

近幾年市面上垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser, VCSEL)被廣泛應用於3C消費性產品內感測器應用，因此國內外許多科技公司努力的開發及研究垂直共振腔面射型雷射(VCSEL)元件。本碩論主要的研究及探討方向為紅光波長之垂直共振腔面射型雷射元件(Vertical Cavity Surface Emitting Laser, VCSEL)的元件研究及備製，由於垂直共振腔面射型雷射(VCSEL)相較於邊射型雷射(Edge Emitting Laser, EEL)擁有更多的優點。例如：正面發光、成本低、體積小、壽命長、臨界電流低且光束為對稱之圓形，因此於光纖通訊應用上與需要進行耦合的應用商品有更高的優勢。此次研究是利用有機金屬化學氣相沉積法(Metal Organic Chemical-Vapor Deposition , MOCVD)在GaAs基板上沉積布拉格反射鏡(Distributed Bragg Reflector ,DBR)分別為N型分佈布拉格反射鏡(N type-Distributed Bragg Reflector,　N-DBR)及P型布拉格反射鏡(P type-Distributed Bragg Reflector,　P-DBR)之680nm波長磊晶結構，再利用黃光微影製程製作，及濕性蝕刻與配合水氣氧化技術方式，將元件電流侷限而提升輸出功率，並使用積分球量測設備，量測此紅光VCSEL元件之特性，如：臨界電流、額定電壓、輸出功率以及波長等。

關鍵字

垂直共振腔面射型雷射；邊射型雷射；有機金屬化學氣相沉積法；水氣氧化技術；紅光垂直共振腔面射型雷射

並列摘要

In recent years, Vertical-Cavity Surface-Emitting Lasers (VCSELs) in the market have been widely used in sensor applications in 3C consumer products therefore, world-wide technology companies have worked extremely hard to develop for much wider applications, such as industrial sensors, LiDAR, robotics, health care and etc. The main content of this thesis is about the preparation of the Vertical-Cavity Surface-Emitting Laser (VCSEL) with 680nm wavelength. Comparing VCSEL with Edge Emitting Laser (EEL), it has many advantages, such as front light emission, low cost, small size, long life, low critical current, and symmetrical beam profile; in addition, it is also used in optical fiber communication applications with high coupling efficiency. This work was done using Metal Organic Chemical-Vapor Deposition (MOCVD) to deposit the Distributed Bragg Reflector (DBR) on the GaAs substrate. They are N type-Distributed Bragg Reflector (N-DBR) and P type-Distributed Bragg Reflector (P-DBR) 680nm wavelength epitaxial structure followed with complicated wafer processing steps, including yellow light lithography process production, wet etching, and water oxidation technology. Its electric-optical properties was also measured with various tools, such as integrating sphere used to measure the critical current, rated voltage, output power and wavelength of the VCSEL device.