- 學位論文
電漿蝕刻製程參數對聚醯亞胺製程之蝕刻設備特性
The Role of The Plasma Etching Process on The Polyimide Etching Equipment
摘要
電漿蝕刻技術大量且廣泛的應用於高科技之半導體製程、光電、太陽能及微機電產業中。由於電漿蝕刻屬於非等向性蝕刻且具有高選擇比，在晶圓尺寸直徑變大、元件線寬變小、製程步驟增加及特殊化的發展下，具有非常重要的獨佔性。 本論文探討電漿蝕刻中的聚醯亞胺蝕刻製程。在蝕刻製程中分別調整及控制氧氣的壓力、四氟化碳的流量、製程的時間、以及承接產品之設備作動速度的快慢；來探討各種實驗參數在此道製程中，製程產生的生成物對蝕刻反應腔體之影響，並且以設備保養時數做為觀察和比較。 研究結果中發現在適當的參數控制下，在四氟化碳流量90 sccm、製程時間5分鐘的條件下，可以有效移除在蝕刻反應腔體製程中附著的反應生成物，減少產品與反應腔體平台（ESC）吸附不良問題，並使設備保養的保養時數從60延長至105小時。；並且加入pre-dummy and idle time之設定，不僅可以改善此道製程suffer defect問題，同時可以提升良率2﹪。
並列摘要
Plasma etching technology is large and widely used in high-tech semiconductor manufacturing process, optoelectronics, solar and micro-electromechanical industry. The development of plasma etching is anisotropic etching and a high selection ratio, larger diameter of the wafer size, component line width is smaller, the process steps to increase specialization, has a very important exclusive. In this study examines the plasma etching of polyimide etching process equipment and process parameters as the experiment, to adjust and control the oxygen pressure in the etching process, CF4 flow rate, process time, and to undertake product equipment for moving the speed of; to explore a variety of experimental parameters in this channel process, process the resultant impact on the etching reaction chamber, and as a comparison and observation of the number of equipment maintenance. Results found in the appropriate parameters under the control of CF4 flow 90 sccm, the process time of 5 minutes under the conditions, can effectively remove reaction products attached to the process of etching reaction chamber system to reduce the product and the reaction chamber body platform (ESC) adsorption bad problem, and maintenance of the equipment maintenance to extend from 60 to 105 hours. ; And joined the pre-dummy and idle time setting, not only can improve the channel process suffer defect problems, can improve the yield of 2%.