利用自然長度為依據之電腦輔助設計軟體 預測鰭式場效電晶體的次臨界擺幅及汲極偏壓致通道能障降低效應

Natural Length Based Predictive TCAD for the Subthreshold Swing and Drain-Induced Barrier Lowering in Bulk FinFETs

廖姜婷(Chiang-Ting Liao)

指導教授 ： 陳明哲

國立交通大學/電機學院/電子工程系所/碩士(2016年)

摘要

在追求元件尺寸微縮的競爭道路上，除了要降低短通道效應外，如何繼續提升元件密度及降低功耗也是大家關注的議題，因此，各式多閘極的新型元件陸續被提出。為了精準的預測多閘極元件的次臨限擺幅(Subthreshold swing, SS)及汲極偏壓導致通道能障降低效應(Drain-induced barrier lowering, DIBL)，我們使用電腦輔助設計軟體(TCAD)並透過量測實驗數據校正建立結構，來模擬業界的高介電常數金屬閘極之塊狀基板鰭式場效電晶體(HKMG bulk FinFET )。此外，我們引入自然常數及修正係數，藉由物理的模型推導，建立SS及DIBL的經驗公式，如此便可以透過TCAD模擬達到預測多閘極元件最佳化的情形。

關鍵字

塊狀基板之鰭式場效電晶體 ； 三閘極電晶體 ； 多閘極電晶體 ； 自然長度 ； 等效通道長度 ； 源極/汲極串聯電阻 ； 汲極偏壓導致通道能障降低效應 ； 次臨界擺幅

並列摘要

In order to keep pace with the Moore’s Law, suppressing short-channel effects through novel multiple gate geometry architectures of device is a practical solution to make shrinking possible. To accurately predict the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) of multi-gate FETs, we employ a commercial TCAD code on the industrial bulk FinFETs. The TCAD calibration task is well done via a natural length and its experimentally determined correction coefficient. This predictive TCAD enables the optimization of multi-gate FETs with suppressed SS and DIBL.

並列關鍵字

bulk FinFET ； tri-gate FET ； multi-gate FET ； natural length ； effective channel length ； S/D series resistance ； drain-induced barrier lowering ； subthreshold swing

參考文獻

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